Measurement of Pulsed Current-Voltage Characteristics of AlGaN/GaN HEMTs from Room Temperature to 15 K
- Laurent, T.
- Sharma, R.
- Torres, J.
- Nouvel, P.
- Blin, S.
- Palermo, C.
- Varani, L.
- Cordier, Y.
- Chmielowska, M.
- Faurie, J.-P.
- Beaumont, B.
Publication date
February 2011
DOI Publisher
Institute of Physics, Polish Academy of SciencesAbstract
International audienceWe report measurements of the pulsed and dc current-voltage characteristics of AlGaN/GaN high-electron-mobility transistors as functions of geometry, temperature (from 300 down to 15 K), and operating conditions. An increase in the drain current with shortening of the pulse width from 1 µs to 400 ns is found to be significant at room temperature whilst this behavior is inverted or even removed at 77 and 15 K temperatures
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