Conduction mechanisms in Pt/TiO₂/Pt memristors

Resistive random access memories (RRAMs) receive increasing attention as very promising candidates for the next generation of nonvolatile memories, as well as for artificial neuronetworks and reconfigurable systems developments. A key feature for the aforementioned applications is their ability to obtain multiple resistive levels by proper tuning of the biasing schemes. Therefore, clarification of the dominant conduction mechanism, which remains to date a topic of debate, is of a paramount importance. This strongly depends on the device characteristics (oxide and electrodes’ materials) and the programming bias schemes. & more..