Add to ORKGInternational audienceA low-cost method to reduce the threading disloca-tions density (TDD) in relaxed germanium (Ge) epilayers grown on silicon (Si) substrates is presented. Ge/Si sub-strate was treated with post epitaxial process to create a region with a high density of nanovoids in Ge layer which act as a barrier for threading dislocations propagation
A perfectly compliant substrate would allow the monolithic integration of high-quality semiconductor...
A perfectly compliant substrate would allow the monolithic integration of high-quality semiconductor...
A perfectly compliant substrate would allow the monolithic integration of high-quality semiconductor...
International audienceA low-cost method to reduce the threading disloca-tions density (TDD) in relax...
Today’s photovoltaics market is dominated by silicon-based technology, as it is inexpensive and matu...
Today’s photovoltaics market is dominated by silicon-based technology, as it is inexpensive and matu...
International audienceIn this presentation, we propose a new defect engineering strategy in highly m...
AbstractThe selective growth of germanium into nanoscale trenches on silicon substrates was ext. 766...
The monolithic integration of III-V compound semiconductor devices with silicon presents physical an...
International audienceA low-cost method to reduce the threading dislocations density (TDD) in relaxe...
While silicon represents the dominant material in the semiconductor industry, the continuous improve...
To further boost the CMOS device performance, Ge has been successfully integrated on shallow trench ...
To further boost the CMOS device performance, Ge has been successfully integrated on shallow trench ...
Silicon germanium (SiGe) virtual substrates of final germanium composition x = 0.50 have been fabric...
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Materials Science and Engineeri...
A perfectly compliant substrate would allow the monolithic integration of high-quality semiconductor...
A perfectly compliant substrate would allow the monolithic integration of high-quality semiconductor...
A perfectly compliant substrate would allow the monolithic integration of high-quality semiconductor...
International audienceA low-cost method to reduce the threading disloca-tions density (TDD) in relax...
Today’s photovoltaics market is dominated by silicon-based technology, as it is inexpensive and matu...
Today’s photovoltaics market is dominated by silicon-based technology, as it is inexpensive and matu...
International audienceIn this presentation, we propose a new defect engineering strategy in highly m...
AbstractThe selective growth of germanium into nanoscale trenches on silicon substrates was ext. 766...
The monolithic integration of III-V compound semiconductor devices with silicon presents physical an...
International audienceA low-cost method to reduce the threading dislocations density (TDD) in relaxe...
While silicon represents the dominant material in the semiconductor industry, the continuous improve...
To further boost the CMOS device performance, Ge has been successfully integrated on shallow trench ...
To further boost the CMOS device performance, Ge has been successfully integrated on shallow trench ...
Silicon germanium (SiGe) virtual substrates of final germanium composition x = 0.50 have been fabric...
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Materials Science and Engineeri...
A perfectly compliant substrate would allow the monolithic integration of high-quality semiconductor...
A perfectly compliant substrate would allow the monolithic integration of high-quality semiconductor...
A perfectly compliant substrate would allow the monolithic integration of high-quality semiconductor...