Nickel selenide thin films have been potentiostatically electrodeposited on titanium substrate at room temperature from aqueous solution containing Ni-EDTA and Na2SeO3. Various deposition potentials were attempted in order to determine the optimum electrodeposition potential. The films were characterised using x-ray diffraction analysis (XRD) and the photoactivity of the electrosynthesised films were studied using linear sweep voltammetry (LSV). The band-gap energy was determined using UV-visible spectroscopy. The XRD analysis indicated the formation of polycrystalline Ni3Se2. The film exhibited p-type semiconductor behaviour with good photosensitivity. The bandgap energy (Eg) was about 1.4eV
Thin films of nickel chalcogenide, NiX2 (X= S, Se) have been electrosynthesized on indiumtin-oxide (...
Tin selenide (SnSe) thin films were electrochemically deposited onto Au(1 1 1) substrates from an aq...
Various metal selenides were directly deposited on conductive glass and evaluated as counter electro...
Nickel selenide thin films have been potentiostatically electrodeposited on titanium substrate at ro...
The transition metal, nickel is a favourable material to create combination with chalcogenides eleme...
Nickel tin selenide thin films have been potentiostatically electrodeposited on titanium substrate f...
The present study investigates the role of deposition time on the structural, morphological, composi...
The transition metal, nickel is a favourable material to create combination with chalcogenides eleme...
Cathodic electrodeposition in the presence of tartrate ions in aqueous solution was used to prepare ...
A metal-rich form of Ni-selenide, nickel subselenide, Ni3Se2 has been investigated as a potential ox...
As a significant semiconductor, nickel selenide shows enormous potential and extensive application p...
Nickel selenide, NiSe2 is one of the absorbent materials used in thin film technology in photoelectr...
Nickel selenide, NiSe2 is one of the absorbent materials used in thin film technology in photoelectr...
Nickel chalcogenides, NiX2(X=S,Se) thin films were successfully electrodeposited on indium-tin-oxide...
AbstractNickel selenide, NiSe2 is one of the absorbent materials used in thin film technology in pho...
Thin films of nickel chalcogenide, NiX2 (X= S, Se) have been electrosynthesized on indiumtin-oxide (...
Tin selenide (SnSe) thin films were electrochemically deposited onto Au(1 1 1) substrates from an aq...
Various metal selenides were directly deposited on conductive glass and evaluated as counter electro...
Nickel selenide thin films have been potentiostatically electrodeposited on titanium substrate at ro...
The transition metal, nickel is a favourable material to create combination with chalcogenides eleme...
Nickel tin selenide thin films have been potentiostatically electrodeposited on titanium substrate f...
The present study investigates the role of deposition time on the structural, morphological, composi...
The transition metal, nickel is a favourable material to create combination with chalcogenides eleme...
Cathodic electrodeposition in the presence of tartrate ions in aqueous solution was used to prepare ...
A metal-rich form of Ni-selenide, nickel subselenide, Ni3Se2 has been investigated as a potential ox...
As a significant semiconductor, nickel selenide shows enormous potential and extensive application p...
Nickel selenide, NiSe2 is one of the absorbent materials used in thin film technology in photoelectr...
Nickel selenide, NiSe2 is one of the absorbent materials used in thin film technology in photoelectr...
Nickel chalcogenides, NiX2(X=S,Se) thin films were successfully electrodeposited on indium-tin-oxide...
AbstractNickel selenide, NiSe2 is one of the absorbent materials used in thin film technology in pho...
Thin films of nickel chalcogenide, NiX2 (X= S, Se) have been electrosynthesized on indiumtin-oxide (...
Tin selenide (SnSe) thin films were electrochemically deposited onto Au(1 1 1) substrates from an aq...
Various metal selenides were directly deposited on conductive glass and evaluated as counter electro...