An Investigation of the Effects of Emitter Pre-Deposition Temperature in Double-Diffued Polysilicon Emitter Bipolar Transistor
In this paper we present an investigation of the static performance over the 300K-80K temperature ra...
Considering polysilicon/silicon interfacial oxide capacitance, a new analytical model of emitter tra...
The fabrication of the very high speed polysilicon emitter bipolar transistor and circuit with doubl...
It was demonstrated that the common emitter current gain of bipolar transistors could be improved by...
Silicon bipolar transistors have been fabricated with arsenic implanted or phosphorous diffused poly...
[[abstract]]A two-dimensional model with grain boundary traps for polycrystalline silicon is used in...
This thesis investigates the use of in-situ phosphorus doped polysilicon emitter contacts in deep su...
This paper investigates the effects of an in-situ hydrogen bake and an ex-situ HF etch prior to poly...
In-situ boron-doped polysilicon has been used to form the emitter in p-n-p transistors. Various poly...
This thesis describes the results of an experimental and theoretical study of the physics of polysil...
Based on the comprehensive analytical model published, an analytical theory relating PET's curr...
Existing experiments and theories have demonstrated that the polysilicon emitter contact bipolar tra...
An analytical model is proposed by including carrier transport mechanisms which previous unified ana...
In a self-aligned double polysilicon bipolar junction transistor (BJT) process, the emitter window i...
The d.c. characteristics are computed for pnp polysilicon emitter transistors (PETs) in which a thin...
In this paper we present an investigation of the static performance over the 300K-80K temperature ra...
Considering polysilicon/silicon interfacial oxide capacitance, a new analytical model of emitter tra...
The fabrication of the very high speed polysilicon emitter bipolar transistor and circuit with doubl...
It was demonstrated that the common emitter current gain of bipolar transistors could be improved by...
Silicon bipolar transistors have been fabricated with arsenic implanted or phosphorous diffused poly...
[[abstract]]A two-dimensional model with grain boundary traps for polycrystalline silicon is used in...
This thesis investigates the use of in-situ phosphorus doped polysilicon emitter contacts in deep su...
This paper investigates the effects of an in-situ hydrogen bake and an ex-situ HF etch prior to poly...
In-situ boron-doped polysilicon has been used to form the emitter in p-n-p transistors. Various poly...
This thesis describes the results of an experimental and theoretical study of the physics of polysil...
Based on the comprehensive analytical model published, an analytical theory relating PET's curr...
Existing experiments and theories have demonstrated that the polysilicon emitter contact bipolar tra...
An analytical model is proposed by including carrier transport mechanisms which previous unified ana...
In a self-aligned double polysilicon bipolar junction transistor (BJT) process, the emitter window i...
The d.c. characteristics are computed for pnp polysilicon emitter transistors (PETs) in which a thin...
In this paper we present an investigation of the static performance over the 300K-80K temperature ra...
Considering polysilicon/silicon interfacial oxide capacitance, a new analytical model of emitter tra...
The fabrication of the very high speed polysilicon emitter bipolar transistor and circuit with doubl...
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