Add to ORKGGrowth interruption was introduced during the growth of GaAs capping layer of self-organized quantum dots. The comparison of two QD lasers with and without growth interruption in their active regions shows that growth interruption leads to lower threshold current, higher characteristic temperature, and weaker temperature dependence of lasing energy
After capping InAs islands with a thin enough GaAs layer, growth interruption has been introduced. E...
A study of the threshold characteristics of quantum-dot (QD) laser diodes shows how inhomogeneous br...
Theoretical analysis of the effect of reduction in dimensionality on the density of states for semic...
We grow In-GaAs quantum dot (QD) at low growth rate with 70 times insertion of growth interruption i...
Quantum dots have demonstrated improved performance relative to quantum wells in lasers and amplifie...
The effect of growth interruption (GI) on the optical properties of InAs/GaAs quantum dots was inves...
The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures ...
The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures w...
The thermal behavior of lasers based on In 0.5Ga 0.5/As/GaAs self-aggregated quantum dots is investi...
We investigate the use of growth interruption to obtain low-density InAs quantum dots (QDs) on GaAs....
Growth interruption was introduced after the deposition of GaAs cap layer, which is thinner than the...
Self-assembled InAs quantum dots (QDs) grown on GaAs(001) by molecular beam epitaxy under continuous...
Growth interruption was introduced after the deposition of GaAs cap layer, which is thinner than the...
A study of the threshold characteristics of quantum-dot (QD) laser diodes shows how inhomogeneous br...
A review. The modulation response of quantum-dot (QD) lasers has remained limited in the 1300 to 155...
After capping InAs islands with a thin enough GaAs layer, growth interruption has been introduced. E...
A study of the threshold characteristics of quantum-dot (QD) laser diodes shows how inhomogeneous br...
Theoretical analysis of the effect of reduction in dimensionality on the density of states for semic...
We grow In-GaAs quantum dot (QD) at low growth rate with 70 times insertion of growth interruption i...
Quantum dots have demonstrated improved performance relative to quantum wells in lasers and amplifie...
The effect of growth interruption (GI) on the optical properties of InAs/GaAs quantum dots was inves...
The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures ...
The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures w...
The thermal behavior of lasers based on In 0.5Ga 0.5/As/GaAs self-aggregated quantum dots is investi...
We investigate the use of growth interruption to obtain low-density InAs quantum dots (QDs) on GaAs....
Growth interruption was introduced after the deposition of GaAs cap layer, which is thinner than the...
Self-assembled InAs quantum dots (QDs) grown on GaAs(001) by molecular beam epitaxy under continuous...
Growth interruption was introduced after the deposition of GaAs cap layer, which is thinner than the...
A study of the threshold characteristics of quantum-dot (QD) laser diodes shows how inhomogeneous br...
A review. The modulation response of quantum-dot (QD) lasers has remained limited in the 1300 to 155...
After capping InAs islands with a thin enough GaAs layer, growth interruption has been introduced. E...
A study of the threshold characteristics of quantum-dot (QD) laser diodes shows how inhomogeneous br...
Theoretical analysis of the effect of reduction in dimensionality on the density of states for semic...