Circuit for sensing the content of a semiconductor memory

A sensing circuit (100) for sensing the content of a memory cell (101), wherein the sensing circuit comprises a sense node (103) connectable to the memory cell (101) so that a signal indicative of the content of the memory cell (101) is providable to the sense node (103). The sensing circuit (100) further comprises a logic gate (102) having a first input, a second input and an output, wherein a reference signal (105) is providable to the first input and wherein the sense node (103) is coupled to the second input. The sensing circuit (100) further comprises a feedback loop (104) for coupling the output of the logic gate (102) to the second input of the logic gate (102) so that, during sensing the content of the memory cell (101), an electrical potential at the sense node (103) is used to make a decision but after a result is obtained, the memory and sense amplifier combination are configured so that the result is held indefinitely and so that no static current continues to flow