Voltage shifts of Fowler-Nordheim tunneling J-V plots in thin gate oxide MOS structures due to trapped charges

This paper describes a novel simulation of Fowler-Nordheim (F-N) tunneling of electrons from either tunneling interface, i.e. from the gate or the inversion layer of a p-type substrate into the oxide. It accounts for the effects of finite electron-hole pairs generation in the substrate and shapes of tunneling barrier created by charge trapped in the oxide for F-N tunneling