In this paper, we investigate single and double layer potentials mapping boundary data to interior functions of a domain at high frequency λ2→∞. In the high frequency regime the key problem is the dependence of mapping norms on the parameter λ. For single layer potentials, we find that the L2(∂Ω)→L2(Ω) norms decay in λ. The rate of decay depends on the curvature of ∂Ω: The norm is λ-3/4 in piecewise smooth domains and λ-5/6 if the boundary ∂Ω is positively curved. The double layer potential, however, displays uniform L2(∂Ω)→L2(Ω) bounds independent of curvature. By various examples, we show that all our estimates on layer potentials are sharp. Appendix A by Galkowski gives bounds L2(∂Ω)→L2(∂Ω) for the single and double layer operators at hi...
International audienceWe study the behavior of steady state voltage potentials in two kinds of bidim...
International audienceWe study the high-frequency Helmholtz equation, for a potential having C-2 smo...
We prove the validity of regularizing properties of a double layer potential associated to the funda...
We study a commonly-used second-kind boundary-integral equation for solving the Helmholtz exterior N...
We study a commonly-used second-kind boundary-integral equation for solving the Helmholtz exterior N...
We study the effect of regular and singular domain perturbations on layer potential operators for th...
Abstract For a model diffusion equation on a Lipschitz simply connected bounded domain with a small ...
Abstract. Consider a conducting disk surrounded by a thin dielectric layer submitted to an electric ...
We prove that the double layer potential operator and the gradient of the single layer potential ope...
International audienceConsider a disk surrounded by a thin conducting layer submitted to an electric...
Let u(x, G) be the classical stress function of a finitely connected plane domain G. The isoperimetr...
We prove sharp L-2 boundary decay estimates for the eigenfunctions of certain second order elliptic ...
We consider in [1,2] a model homogeneous Dirichlet problem for a diffusion equation on a Lipschitz s...
AbstractWe prove the well-posedness of the transmission problem for the Laplacian across a Lipschitz...
AbstractWe study the high-frequency Helmholtz equation, for a potential having C2 smoothness, and sa...
International audienceWe study the behavior of steady state voltage potentials in two kinds of bidim...
International audienceWe study the high-frequency Helmholtz equation, for a potential having C-2 smo...
We prove the validity of regularizing properties of a double layer potential associated to the funda...
We study a commonly-used second-kind boundary-integral equation for solving the Helmholtz exterior N...
We study a commonly-used second-kind boundary-integral equation for solving the Helmholtz exterior N...
We study the effect of regular and singular domain perturbations on layer potential operators for th...
Abstract For a model diffusion equation on a Lipschitz simply connected bounded domain with a small ...
Abstract. Consider a conducting disk surrounded by a thin dielectric layer submitted to an electric ...
We prove that the double layer potential operator and the gradient of the single layer potential ope...
International audienceConsider a disk surrounded by a thin conducting layer submitted to an electric...
Let u(x, G) be the classical stress function of a finitely connected plane domain G. The isoperimetr...
We prove sharp L-2 boundary decay estimates for the eigenfunctions of certain second order elliptic ...
We consider in [1,2] a model homogeneous Dirichlet problem for a diffusion equation on a Lipschitz s...
AbstractWe prove the well-posedness of the transmission problem for the Laplacian across a Lipschitz...
AbstractWe study the high-frequency Helmholtz equation, for a potential having C2 smoothness, and sa...
International audienceWe study the behavior of steady state voltage potentials in two kinds of bidim...
International audienceWe study the high-frequency Helmholtz equation, for a potential having C-2 smo...
We prove the validity of regularizing properties of a double layer potential associated to the funda...