Separation of Vacancy and Interstitial Depth Profiles in Proton- and Boron-Implanted Silicon

Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport

Willems van Beveren, L.H., ARC Centre of Excellence for Quantum Computer Technology, UNSW
Gauja, E., ARC Centre of Excellence for Quantum Computer Technology, UNSW
Johnson, B.C., The University of Melbourne
McCallum, J.C., The University of Melbourne

January 2010

A deep level transient spectroscopy (DLTS) study of defects created by low-fluence, low-energy ion-i...

Ion Mass Effect on Vacancy-Related Deep Levels in Si Induced by Ion Implantation

Monakhov, E V
Wong-Leung, Yin-Yin (Jennifer)
Kuznetsov, A Yu
Jagadish, Chennupati
Svensson, Bengt Gunnar

December 2015

The ion mass effect on the dominating vacancy related deep levels in Cz-Si implanted with 4-MeV C io...

Reliable Measurements of Defect Profiles in Low-Energy Boron Implanted Silicon

Benchenane-Mehor, Halima
Idrissi-Benzohra, Malika
Benzohra, Mohamed
Olivié, François

November 2004

International audienceLow-energy implantation is one of the most promising options for ultrashallow ...

Vacancy and interstitial depth profiles in ion-implanted silicon

Leveque, P.
Kortegaard Nielsen, H.
Pellegrino, Paolo
Hallen, A.
Svensson, Bengt G.
Kuznetsov, Andrej
Wong-Leung, J.
Jagadish, C. (Chennupati)
Privitera, V.

An experimental method of studying shifts between concentration-versus-depth profiles of vacancy- an...

Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation

Pellegrino, P.
Lévêque, P.
Wong-Leung, J.
Jagadish, C.
Svensson, B. G.

December 2015

An experimental concept of studying shifts between concentration-versus-depth profiles of vacancy an...

High resolution electrical studies of vacancy-rich and interstitial-rich regions in ion-implanted silicon

Abdelgader, N.
Evans-Freeman, J. H.

May 2003

A combination of high resolution Laplace deep level transient spectroscopy (LDLTS) and direct captur...

Deep electronic states in ion-implanted Si Deep Electronic States in Ion-Implanted Si

Evans-Freeman
EMIROGLU J H
GAD D
MITROMARA M A
N
Vernon-Parry
K D
Evans-Freeman
EMIROGLU J H
GAD D
MITROMARA M A
N
Vernon-Parry
K D (
J H Evans-Freeman
D Emiroglu
M A Gad
N Mitromara
K D Vernon-Parry

January 2006

Abstract In this paper we present an overview of the deep states present after ion-implantation by v...

High resolution deep level transient spectroscopy studies of the vacancy-oxygen and related defects in ion-implanted silicon

Evans-Freeman, J. H.
Abdelgader, N.
Kan, P. Y. Y.

October 2002

We have carried out high resolution Laplace deep level transient Spectroscopy (DLTS) and conventiona...

Deep electronic states in ion-implanted Si

Evans-Freeman, J. H.
Emiroglu, D.
Gad, M. A.
Mitromara, N.
Vernon-Parry, K. D.

February 2006

In this paper we present an overview of the deep states present after ion-implantation by various sp...

Generation of vacancy cluster-related defects during single MeV silicon ion implantation of silicon

Pastuovic, Z
Capan, I
Siegele, R
Jacimovic, R
Forneris, J
Cohen, DD
Vittone, E

October 2016

Deep Level Transient Spectroscopy (DLTS) has been used to study defects formed in bulk silicon after...

Deep levels induced by low energy B+ implantation into Ge-preamorphised silicon in correlation with end of range formation

Benzohra, Mohamed
Olivié, François
Benzohra, Malika
Ketata, Kaouther
Ketata, Mohamed

February 2002

International audienceIt is well established that low energy B+ ion implantation into Ge- (or Si) im...

Electrical characterisation and predictive simulation of defects induced by keV Si+ implantation in n-type Si

Nyamhere, Cloud
Cristiano, Fuccio
Olivie, François
Essa, Z.
Bedel-Pereira, Eléna
Bolze, D
Yamamoto, Y

May 2013

International audienceIn this work, we focused on the analysis of implantation-induced defects, main...

Implantation Angle Dependent Study of Vacancy Related Defect Profiles in Ion Implanted Silicon

Lay, M D H
McCallum, Jeffrey C
Jagadish, Chennupati

December 2015

The effect of implantation angle on the profile of the vacancy-phosphorus and divacancy centres (VP/...

DLTS characterization of proton-implanted silicon under varying annealing conditions

Laven, J.G.
Jelinek, M.
Job, R.
Schustereder, W.
Schulze, H.-J.
Rommel, M.
Frey, L.

January 2014

Deep-level defects remaining in the upper half of the band-gap of silicon implanted with protons at ...

Capan, I
Pastuovic, Z
Siegele, R
Jacimovic, R

April 2016

Deep level transient spectroscopy (DLTS) has been used to study vacancy-related defects formed in bu...

Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport

Willems van Beveren, L.H., ARC Centre of Excellence for Quantum Computer Technology, UNSW
Gauja, E., ARC Centre of Excellence for Quantum Computer Technology, UNSW
Johnson, B.C., The University of Melbourne
McCallum, J.C., The University of Melbourne

January 2010

A deep level transient spectroscopy (DLTS) study of defects created by low-fluence, low-energy ion-i...

Ion Mass Effect on Vacancy-Related Deep Levels in Si Induced by Ion Implantation

Monakhov, E V
Wong-Leung, Yin-Yin (Jennifer)
Kuznetsov, A Yu
Jagadish, Chennupati
Svensson, Bengt Gunnar

December 2015

The ion mass effect on the dominating vacancy related deep levels in Cz-Si implanted with 4-MeV C io...

Reliable Measurements of Defect Profiles in Low-Energy Boron Implanted Silicon

Benchenane-Mehor, Halima
Idrissi-Benzohra, Malika
Benzohra, Mohamed
Olivié, François

November 2004

International audienceLow-energy implantation is one of the most promising options for ultrashallow ...

Vacancy and interstitial depth profiles in ion-implanted silicon

Leveque, P.
Kortegaard Nielsen, H.
Pellegrino, Paolo
Hallen, A.
Svensson, Bengt G.
Kuznetsov, Andrej
Wong-Leung, J.
Jagadish, C. (Chennupati)
Privitera, V.

An experimental method of studying shifts between concentration-versus-depth profiles of vacancy- an...

Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation

Pellegrino, P.
Lévêque, P.
Wong-Leung, J.
Jagadish, C.
Svensson, B. G.

December 2015

An experimental concept of studying shifts between concentration-versus-depth profiles of vacancy an...

High resolution electrical studies of vacancy-rich and interstitial-rich regions in ion-implanted silicon

Abdelgader, N.
Evans-Freeman, J. H.

May 2003

A combination of high resolution Laplace deep level transient spectroscopy (LDLTS) and direct captur...

Deep electronic states in ion-implanted Si Deep Electronic States in Ion-Implanted Si

Evans-Freeman
EMIROGLU J H
GAD D
MITROMARA M A
N
Vernon-Parry
K D
Evans-Freeman
EMIROGLU J H
GAD D
MITROMARA M A
N
Vernon-Parry
K D (
J H Evans-Freeman
D Emiroglu
M A Gad
N Mitromara
K D Vernon-Parry

January 2006

Abstract In this paper we present an overview of the deep states present after ion-implantation by v...

High resolution deep level transient spectroscopy studies of the vacancy-oxygen and related defects in ion-implanted silicon

Evans-Freeman, J. H.
Abdelgader, N.
Kan, P. Y. Y.

October 2002

We have carried out high resolution Laplace deep level transient Spectroscopy (DLTS) and conventiona...

Deep electronic states in ion-implanted Si

Evans-Freeman, J. H.
Emiroglu, D.
Gad, M. A.
Mitromara, N.
Vernon-Parry, K. D.

February 2006

In this paper we present an overview of the deep states present after ion-implantation by various sp...

Generation of vacancy cluster-related defects during single MeV silicon ion implantation of silicon

Pastuovic, Z
Capan, I
Siegele, R
Jacimovic, R
Forneris, J
Cohen, DD
Vittone, E

October 2016

Deep Level Transient Spectroscopy (DLTS) has been used to study defects formed in bulk silicon after...

Deep levels induced by low energy B+ implantation into Ge-preamorphised silicon in correlation with end of range formation

Benzohra, Mohamed
Olivié, François
Benzohra, Malika
Ketata, Kaouther
Ketata, Mohamed

February 2002

International audienceIt is well established that low energy B+ ion implantation into Ge- (or Si) im...

Electrical characterisation and predictive simulation of defects induced by keV Si+ implantation in n-type Si

Nyamhere, Cloud
Cristiano, Fuccio
Olivie, François
Essa, Z.
Bedel-Pereira, Eléna
Bolze, D
Yamamoto, Y

May 2013

International audienceIn this work, we focused on the analysis of implantation-induced defects, main...

Implantation Angle Dependent Study of Vacancy Related Defect Profiles in Ion Implanted Silicon

Lay, M D H
McCallum, Jeffrey C
Jagadish, Chennupati

December 2015

The effect of implantation angle on the profile of the vacancy-phosphorus and divacancy centres (VP/...

DLTS characterization of proton-implanted silicon under varying annealing conditions

Laven, J.G.
Jelinek, M.
Job, R.
Schustereder, W.
Schulze, H.-J.
Rommel, M.
Frey, L.

January 2014

Deep-level defects remaining in the upper half of the band-gap of silicon implanted with protons at ...

Capan, I
Pastuovic, Z
Siegele, R
Jacimovic, R

April 2016

Deep level transient spectroscopy (DLTS) has been used to study vacancy-related defects formed in bu...

Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport

Willems van Beveren, L.H., ARC Centre of Excellence for Quantum Computer Technology, UNSW
Gauja, E., ARC Centre of Excellence for Quantum Computer Technology, UNSW
Johnson, B.C., The University of Melbourne
McCallum, J.C., The University of Melbourne

January 2010

A deep level transient spectroscopy (DLTS) study of defects created by low-fluence, low-energy ion-i...

Ion Mass Effect on Vacancy-Related Deep Levels in Si Induced by Ion Implantation

Monakhov, E V
Wong-Leung, Yin-Yin (Jennifer)
Kuznetsov, A Yu
Jagadish, Chennupati
Svensson, Bengt Gunnar

December 2015

The ion mass effect on the dominating vacancy related deep levels in Cz-Si implanted with 4-MeV C io...

Reliable Measurements of Defect Profiles in Low-Energy Boron Implanted Silicon

Benchenane-Mehor, Halima
Idrissi-Benzohra, Malika
Benzohra, Mohamed
Olivié, François

November 2004

International audienceLow-energy implantation is one of the most promising options for ultrashallow ...

Separation of Vacancy and Interstitial Depth Profiles in Proton- and Boron-Implanted Silicon

Abstract

Extracted data

Separation of Vacancy and Interstitial Depth Profiles in Proton- and Boron-Implanted Silicon

Abstract

Extracted data

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