Extended X-ray absorption fine structure measurements have been utilized to determine the structural parameters of InAs amorphised by ion implantation. Relative to crystalline standards, increases in bond length and Debye-Waller factor were apparent. Ou
The perturbed angular correlation technique has been utilized to understand the production and natur...
Structural parameters of InP amorphised by electronic energy deposition were determined using extend...
The structural changes induced in single crystal silicon implanted with silicon ions above the amorp...
Extended X-ray absorption fine structure measurements have been utilized to determine the structural...
Extended X-ray absorption fine structure measurements have been used to characterize, at the atomic ...
Extended X-ray absorption fine structure has been utilised to determine the structural parameters of...
Extended X-ray absorption fine structure has been utilised to determine the structural parameters of...
Extended X-ray absorption fine structure measurements have been used to characterize, at the atomic ...
Extended X-ray absorption fine structure (EXAFS) has been utilized to measure implantation-induced s...
Two microscopic analytical techniques, extended X-ray absorption fine structure (EXAFS) and perturbe...
Implantation-induced, microstructural modifications including increased bond length and non-Gaussian...
The local structure of amorphous Si (a-Si) formed by ion implantation has been investigated at the S...
The structure of implantation-induced damage in Ge has been investigated using high resolution exten...
The local structure of amorphous Si (a-Si) formed by ion implantation has been investigated at the S...
Extended X-ray absorption fine structure and Raman spectroscopy have been utilised to measure implan...
The perturbed angular correlation technique has been utilized to understand the production and natur...
Structural parameters of InP amorphised by electronic energy deposition were determined using extend...
The structural changes induced in single crystal silicon implanted with silicon ions above the amorp...
Extended X-ray absorption fine structure measurements have been utilized to determine the structural...
Extended X-ray absorption fine structure measurements have been used to characterize, at the atomic ...
Extended X-ray absorption fine structure has been utilised to determine the structural parameters of...
Extended X-ray absorption fine structure has been utilised to determine the structural parameters of...
Extended X-ray absorption fine structure measurements have been used to characterize, at the atomic ...
Extended X-ray absorption fine structure (EXAFS) has been utilized to measure implantation-induced s...
Two microscopic analytical techniques, extended X-ray absorption fine structure (EXAFS) and perturbe...
Implantation-induced, microstructural modifications including increased bond length and non-Gaussian...
The local structure of amorphous Si (a-Si) formed by ion implantation has been investigated at the S...
The structure of implantation-induced damage in Ge has been investigated using high resolution exten...
The local structure of amorphous Si (a-Si) formed by ion implantation has been investigated at the S...
Extended X-ray absorption fine structure and Raman spectroscopy have been utilised to measure implan...
The perturbed angular correlation technique has been utilized to understand the production and natur...
Structural parameters of InP amorphised by electronic energy deposition were determined using extend...
The structural changes induced in single crystal silicon implanted with silicon ions above the amorp...
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