Extended X-ray absorption fine structure measurements have been used to characterize, at the atomic level, the thermally induced structural relaxation of InAs amorphized by ion implantation. Our results are consistent with a relaxation mechanism mediate
Extended X-ray absorption fine structure has been utilised to determine the structural parameters of...
Extended X-ray absorption fine structure has been utilised to determine the structural parameters of...
The structure of implantation-induced damage in Ge has been investigated using high resolution exten...
Extended X-ray absorption fine structure measurements have been used to characterize, at the atomic ...
Extended X-ray absorption fine structure measurements have been utilized to determine the structural...
A detailed study of the atomic-scale structure of amorphous semiconductors utilizing Extended X-ray ...
Extended X-ray absorption fine structure measurements have been utilized to determine the structural...
Extended x-ray absorption fine structure measurements have been used to characterize the low-tempera...
The structural changes induced in single crystal silicon implanted with silicon ions above the amorp...
Extended x-ray absorption fine structure measurements have been used to characterize the low-tempera...
Extended X-ray absorption fine structure and Raman spectroscopy have been utilised to measure implan...
The structural relaxation of irradiated III-V compound semiconductors InP, GaAs and InAs arising fro...
Two microscopic analytical techniques, extended X-ray absorption fine structure (EXAFS) and perturbe...
Extended X-ray absorption fine structure (EXAFS) has been utilized to measure implantation-induced s...
Low-temperature structural relaxation in amorphized Ge has been characterized by extended x-ray-abso...
Extended X-ray absorption fine structure has been utilised to determine the structural parameters of...
Extended X-ray absorption fine structure has been utilised to determine the structural parameters of...
The structure of implantation-induced damage in Ge has been investigated using high resolution exten...
Extended X-ray absorption fine structure measurements have been used to characterize, at the atomic ...
Extended X-ray absorption fine structure measurements have been utilized to determine the structural...
A detailed study of the atomic-scale structure of amorphous semiconductors utilizing Extended X-ray ...
Extended X-ray absorption fine structure measurements have been utilized to determine the structural...
Extended x-ray absorption fine structure measurements have been used to characterize the low-tempera...
The structural changes induced in single crystal silicon implanted with silicon ions above the amorp...
Extended x-ray absorption fine structure measurements have been used to characterize the low-tempera...
Extended X-ray absorption fine structure and Raman spectroscopy have been utilised to measure implan...
The structural relaxation of irradiated III-V compound semiconductors InP, GaAs and InAs arising fro...
Two microscopic analytical techniques, extended X-ray absorption fine structure (EXAFS) and perturbe...
Extended X-ray absorption fine structure (EXAFS) has been utilized to measure implantation-induced s...
Low-temperature structural relaxation in amorphized Ge has been characterized by extended x-ray-abso...
Extended X-ray absorption fine structure has been utilised to determine the structural parameters of...
Extended X-ray absorption fine structure has been utilised to determine the structural parameters of...
The structure of implantation-induced damage in Ge has been investigated using high resolution exten...
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