The kink-free output power in 980-nm emitting laser diodes can be increased by 30%-50% in ridge-waveguide devices when the thickness of the oxide is decreased such that the optical field is allowed to interact with the lossy Ti-PtAu metallization outsid
Data are presented on various laser and optical devices that utilize native oxidation of Al bearing ...
The design of ridge waveguide semiconductor pump lasers poses particular simulation problems, since ...
We show that strong n-doping of the n-waveguide layer substantially decreases the thermal carrier le...
[[abstract]]© 2005 Institute of Electrical and Electronics Engineers - Semiconductor lasers fabricat...
We demonstrate zinc-indiffused PPLN ridge waveguides with insertion losses of 1.8 dB in 3.4 cm long ...
[[abstract]]© 2006 Elsevier - In this article, we demonstrated the fabrication of high-speed 1.55-&m...
By etching a second-order grating directly into the Al-free optical waveguide region of a ridgewaveg...
This paper studies, both theoretically and experimentally, stress-induced effects on the lateral far...
A 1.55-mum laser diode integrated with a spot-size converter was fabricated in a single step epitaxi...
Latest developments in single mode, high frequency and high power AlGaInN laser diode technology are...
We experimentally demonstrate the difference between a ridge polariton laser, and a conventional edg...
Increasing the brightness of high-power diode lasers is one of the key topics in today's semiconduct...
A periodic dependence of kink power on laser length is observed and explained. Weakly index guided h...
Abstract—This paper studies, both theoretically and experi-mentally, stress-induced effects on the l...
[[abstract]]© 2007 Electrochemical Society - In this article, a self-terminated oxide polish (STOP) ...
Data are presented on various laser and optical devices that utilize native oxidation of Al bearing ...
The design of ridge waveguide semiconductor pump lasers poses particular simulation problems, since ...
We show that strong n-doping of the n-waveguide layer substantially decreases the thermal carrier le...
[[abstract]]© 2005 Institute of Electrical and Electronics Engineers - Semiconductor lasers fabricat...
We demonstrate zinc-indiffused PPLN ridge waveguides with insertion losses of 1.8 dB in 3.4 cm long ...
[[abstract]]© 2006 Elsevier - In this article, we demonstrated the fabrication of high-speed 1.55-&m...
By etching a second-order grating directly into the Al-free optical waveguide region of a ridgewaveg...
This paper studies, both theoretically and experimentally, stress-induced effects on the lateral far...
A 1.55-mum laser diode integrated with a spot-size converter was fabricated in a single step epitaxi...
Latest developments in single mode, high frequency and high power AlGaInN laser diode technology are...
We experimentally demonstrate the difference between a ridge polariton laser, and a conventional edg...
Increasing the brightness of high-power diode lasers is one of the key topics in today's semiconduct...
A periodic dependence of kink power on laser length is observed and explained. Weakly index guided h...
Abstract—This paper studies, both theoretically and experi-mentally, stress-induced effects on the l...
[[abstract]]© 2007 Electrochemical Society - In this article, a self-terminated oxide polish (STOP) ...
Data are presented on various laser and optical devices that utilize native oxidation of Al bearing ...
The design of ridge waveguide semiconductor pump lasers poses particular simulation problems, since ...
We show that strong n-doping of the n-waveguide layer substantially decreases the thermal carrier le...