Ion irradiation of GaSb yields not only amorphization but also causes the material to become porous. For this report, GaSb has been irradiated to a dose sufficient to yield a porous network comprised of 15 nm wide rods. The local structure has been determined by EXAFS and compared with that of a polycrystalline standard. Significant Ga2O3 formation is observed along with Sb-Sb bonding far in excess of the homopolar bonding observed in other amorphous III-V semiconductors
Ion beam irradiation-induced nanoporous structure formation was investigated on GaSb, InSb, and Ge s...
This work presents in-situ near and below sputter-threshold studies for GaSb(1 0 0) at energies 50, ...
A detailed study of the atomic-scale structure of amorphous semiconductors utilizing Extended X-ray ...
Porosity in GaSb induced by Ga69 ion irradiation has been investigated as a function of implant dose...
We are investigating the structural and optical properties of nano-porous GaSb formed by swift heavy...
Nano-porous structures form in GaSb after ion irradiation with 185 MeV Au ions. The porous layer for...
Ion track formation, amorphization, and the formation of porosity in crystalline GaSb induced by 185...
temperatures, under high pressures and at ambient conditions. Combined EXAFS and powder diffraction ...
Atomic-force microscopy, photoluminescence, and Raman scattering are used to study the formation of ...
Energetic ion beam bombardment of semiconductors often leads to the development of complex nanostruc...
Amorphous materials are not new to scientists and mankind -- man has been using glass and glassy mat...
This is a short review about the ion irradiation-induced foams in antimonide films. III–V semiconduc...
The structural response of β-Ga2O3 to irradiation-induced electronic excitation was investigated. A ...
Ion irradiation of InSb yields not only amorphization but also causes the material to become porous....
The structural response of β-Ga2O3 to irradiation-induced electronic excitation was investigated. A ...
Ion beam irradiation-induced nanoporous structure formation was investigated on GaSb, InSb, and Ge s...
This work presents in-situ near and below sputter-threshold studies for GaSb(1 0 0) at energies 50, ...
A detailed study of the atomic-scale structure of amorphous semiconductors utilizing Extended X-ray ...
Porosity in GaSb induced by Ga69 ion irradiation has been investigated as a function of implant dose...
We are investigating the structural and optical properties of nano-porous GaSb formed by swift heavy...
Nano-porous structures form in GaSb after ion irradiation with 185 MeV Au ions. The porous layer for...
Ion track formation, amorphization, and the formation of porosity in crystalline GaSb induced by 185...
temperatures, under high pressures and at ambient conditions. Combined EXAFS and powder diffraction ...
Atomic-force microscopy, photoluminescence, and Raman scattering are used to study the formation of ...
Energetic ion beam bombardment of semiconductors often leads to the development of complex nanostruc...
Amorphous materials are not new to scientists and mankind -- man has been using glass and glassy mat...
This is a short review about the ion irradiation-induced foams in antimonide films. III–V semiconduc...
The structural response of β-Ga2O3 to irradiation-induced electronic excitation was investigated. A ...
Ion irradiation of InSb yields not only amorphization but also causes the material to become porous....
The structural response of β-Ga2O3 to irradiation-induced electronic excitation was investigated. A ...
Ion beam irradiation-induced nanoporous structure formation was investigated on GaSb, InSb, and Ge s...
This work presents in-situ near and below sputter-threshold studies for GaSb(1 0 0) at energies 50, ...
A detailed study of the atomic-scale structure of amorphous semiconductors utilizing Extended X-ray ...