We show the photo-ionisation of an individual erbium centre in silicon. A single-electron transistor is used as a charge detector to observe the resonant ionization as a function of photon energy. This allows for optical addressing and electrical detection of individual erbium centres with exceptionally narrow line width
Imaging the spatial distribution of silicon nanocrystals (Si-NCs) and erbium ion clusters can assist...
Si nano-devices consisting of a Si quantum wire with fine gates are described. Storage and detection...
This work investigates advanced single-electron transistor (SET) devices fordetection of charge moti...
An erbium-doped silicon transistor prepared by ion implantation and co-doped with oxygen is investig...
GaAs is a light sensitive material, that optical as well as electronic components can be integrated ...
Continued scaling of semiconductor devices has driven information technology into vastly diverse app...
Single rare-earth ions in solids show great potential for quantum applications, including single pho...
The detection of electron spins associated with single defects in solids is a critical operation for...
Recently, there have been increasing demands for controlling individual electrons, photons, and dopa...
There is great interest in developing novel position-sensitive direct detectors for transmission ele...
In this paper, we present a model proposition of photo-SET (single electron photo-detector) aiming a...
We develop a highly sensitive apparatus for efficient room temperature detection of the emission by ...
We propose and demonstrate an all-optical approach to single-electron sensing using the optical tran...
This thesis will be divided into two parts. In the first part, theory and results of a novel system ...
The detection and quantification of chemical and biological species are the key technology in many a...
Imaging the spatial distribution of silicon nanocrystals (Si-NCs) and erbium ion clusters can assist...
Si nano-devices consisting of a Si quantum wire with fine gates are described. Storage and detection...
This work investigates advanced single-electron transistor (SET) devices fordetection of charge moti...
An erbium-doped silicon transistor prepared by ion implantation and co-doped with oxygen is investig...
GaAs is a light sensitive material, that optical as well as electronic components can be integrated ...
Continued scaling of semiconductor devices has driven information technology into vastly diverse app...
Single rare-earth ions in solids show great potential for quantum applications, including single pho...
The detection of electron spins associated with single defects in solids is a critical operation for...
Recently, there have been increasing demands for controlling individual electrons, photons, and dopa...
There is great interest in developing novel position-sensitive direct detectors for transmission ele...
In this paper, we present a model proposition of photo-SET (single electron photo-detector) aiming a...
We develop a highly sensitive apparatus for efficient room temperature detection of the emission by ...
We propose and demonstrate an all-optical approach to single-electron sensing using the optical tran...
This thesis will be divided into two parts. In the first part, theory and results of a novel system ...
The detection and quantification of chemical and biological species are the key technology in many a...
Imaging the spatial distribution of silicon nanocrystals (Si-NCs) and erbium ion clusters can assist...
Si nano-devices consisting of a Si quantum wire with fine gates are described. Storage and detection...
This work investigates advanced single-electron transistor (SET) devices fordetection of charge moti...