A detailed study of the passivation quality of Al2O3 and TiO2 stacks on boron-doped emitters, where the stacks were deposited by thermal atomic layer deposition. The passivation quality was studied for different post-TiO2 anneal temperature, as a functio
Al2O3 deposited by atomic layer deposition (ALD) is known to provide an excellent passivation on low...
In this study, the permeability of passivation layers consisting of aluminum oxide (Al2O3) and titan...
In this contribution, we investigate the Al2O3 surface passivation of InGaAs/InP heterostructures us...
Thin layers of Al2O3 are known to feature excellent passivation properties on highly boron-doped sil...
In this work atomic layer deposition of Al2O3 and TiO2 has been used to obtain dielectric stacks for...
Thin layers of Al2O3 always require a thermal post-deposition treatment to activate the passivation ...
For silicon surface passivation, we investigate stack layers consisting of a thin Al₂O₃ layer and a ...
Thin layers of Al2O3 with thickness tox 64 8 nm were grown by thermal atomic layer deposition at lo...
Aluminum oxide (Al2O3) layers, prepared by atomic layer deposition (ALD), provide excellent surface ...
The authors show here that the passivation quality of Al 2O3 is highly sensitive to the surface cond...
The authors show here that the passivation quality of Al 2O3 is highly sensitive to the surface cond...
In this paper, the growth and material properties of Al2O3 layers grown by thermal atomic layer depo...
The passivation of silicon surfaces play an important role for achieving high-efficiency crystalline...
The process of annealing a SiO2 dielectric layer coated in aluminium, termed the alneal, is known to...
The effect of deposition temperature (Tdep) and subsequent annealing time (tanl) of atomic layer dep...
Al2O3 deposited by atomic layer deposition (ALD) is known to provide an excellent passivation on low...
In this study, the permeability of passivation layers consisting of aluminum oxide (Al2O3) and titan...
In this contribution, we investigate the Al2O3 surface passivation of InGaAs/InP heterostructures us...
Thin layers of Al2O3 are known to feature excellent passivation properties on highly boron-doped sil...
In this work atomic layer deposition of Al2O3 and TiO2 has been used to obtain dielectric stacks for...
Thin layers of Al2O3 always require a thermal post-deposition treatment to activate the passivation ...
For silicon surface passivation, we investigate stack layers consisting of a thin Al₂O₃ layer and a ...
Thin layers of Al2O3 with thickness tox 64 8 nm were grown by thermal atomic layer deposition at lo...
Aluminum oxide (Al2O3) layers, prepared by atomic layer deposition (ALD), provide excellent surface ...
The authors show here that the passivation quality of Al 2O3 is highly sensitive to the surface cond...
The authors show here that the passivation quality of Al 2O3 is highly sensitive to the surface cond...
In this paper, the growth and material properties of Al2O3 layers grown by thermal atomic layer depo...
The passivation of silicon surfaces play an important role for achieving high-efficiency crystalline...
The process of annealing a SiO2 dielectric layer coated in aluminium, termed the alneal, is known to...
The effect of deposition temperature (Tdep) and subsequent annealing time (tanl) of atomic layer dep...
Al2O3 deposited by atomic layer deposition (ALD) is known to provide an excellent passivation on low...
In this study, the permeability of passivation layers consisting of aluminum oxide (Al2O3) and titan...
In this contribution, we investigate the Al2O3 surface passivation of InGaAs/InP heterostructures us...
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