Extended x-ray absorption fine structure (EXAFS) measurements have been used to characterize the ion-irradiation-induced crystalline-to-amorphous phase transformation in Ge nanocrystals. The atomic-scale structure of Ge nanocrystals in a silica matrix i
A combination of conventional and synchrotron-based techniques has been used to characterize the siz...
The formation of GeSi nanoparticles on an SiO2 matrix is studied here by synchrotron-based technique...
Implantation-induced, microstructural modifications including increased bond length and non-Gaussian...
One of the key reasons why nanoscale materials behave differently from their bulk counterparts is th...
Ge nanocrystals (NCs) grown by ion implantation in amorphous silica matrices were irradiated with 5 ...
The formation and structure of Ge nanocrystals produced in silica by ion-implantation and thermal an...
Ge nanocrystals (NCs) grown by ion implantation in amorphous silica matrices were irradiated with 5 ...
Finite-size effects become significant in nanoscale materials. When a nanocrystal is surrounded by a...
Silica-embedded Ge nanoparticles (NPs) of different sizes irradiated with swift heavy ions (SHIs) at...
We have investigated structural and morphological properties of metallic nanocrystals (NCs) exposed ...
We have investigated structural and morphological properties of metallic nanocrystals ( NCs) exposed...
Extended x-ray absorption fine structure (EXAFS) spectroscopy was applied to probe the vibrational p...
A combination of conventional and synchrotron-based techniques has been used to characterize the siz...
Ge nanocrystals were produced in SiO2 by ion implantation and thermal annealing. Size and depth dist...
Ge nanocrystals retain the diamond-type lattice characteristic of bulk crystalline materials. Howeve...
A combination of conventional and synchrotron-based techniques has been used to characterize the siz...
The formation of GeSi nanoparticles on an SiO2 matrix is studied here by synchrotron-based technique...
Implantation-induced, microstructural modifications including increased bond length and non-Gaussian...
One of the key reasons why nanoscale materials behave differently from their bulk counterparts is th...
Ge nanocrystals (NCs) grown by ion implantation in amorphous silica matrices were irradiated with 5 ...
The formation and structure of Ge nanocrystals produced in silica by ion-implantation and thermal an...
Ge nanocrystals (NCs) grown by ion implantation in amorphous silica matrices were irradiated with 5 ...
Finite-size effects become significant in nanoscale materials. When a nanocrystal is surrounded by a...
Silica-embedded Ge nanoparticles (NPs) of different sizes irradiated with swift heavy ions (SHIs) at...
We have investigated structural and morphological properties of metallic nanocrystals (NCs) exposed ...
We have investigated structural and morphological properties of metallic nanocrystals ( NCs) exposed...
Extended x-ray absorption fine structure (EXAFS) spectroscopy was applied to probe the vibrational p...
A combination of conventional and synchrotron-based techniques has been used to characterize the siz...
Ge nanocrystals were produced in SiO2 by ion implantation and thermal annealing. Size and depth dist...
Ge nanocrystals retain the diamond-type lattice characteristic of bulk crystalline materials. Howeve...
A combination of conventional and synchrotron-based techniques has been used to characterize the siz...
The formation of GeSi nanoparticles on an SiO2 matrix is studied here by synchrotron-based technique...
Implantation-induced, microstructural modifications including increased bond length and non-Gaussian...