In this work we investigate the variation of the crystal structure of gold-seeded III-V nanowires with growth parameters, in order to gain a cohesive understanding of these effects. We investigate six III-V materials: GaAs, InAs, GaP, InP, GaSb and InSb
GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (11...
Gallium arsenide (GaAs) nanowires were grown vertically on GaAs (111)B substrate by gold particle-as...
The optical and structural properties of binary and ternary III-V nanowires including GaAs, InP, In(...
In this work we investigate the variation of the crystal structure of gold-seeded III-V nanowires wi...
GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic...
we present results that provide fundamental insights on how to experimentally tailor the planar defe...
While III-V binary nanowires are now well controlled and their growth mechanisms reasonably well und...
We use metal - organic vapour phase epitaxy for growth investigations of epitaxial nanowires in III ...
InP and GaAs based nanowires were grown epitaxially on InP or GaAs (111)B substrates by metalorganic...
We present results that provide fundamental insights on how to experimentally tailor the planar defe...
InP and GaAs based nanowires were grown epitaxially on InP or GaAs (111)B substrates by metalorganic...
Crystal structure and defects have been shown to have a strong impact on III-V nanowire properties. ...
This thesis concerns growth and characterization of gold-particle seeded nanowires of III-V semicond...
Gallium arsenide (GaAs) nanowires were grown vertically on GaAs (111)B substrate by gold particle-as...
GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (11...
GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (11...
Gallium arsenide (GaAs) nanowires were grown vertically on GaAs (111)B substrate by gold particle-as...
The optical and structural properties of binary and ternary III-V nanowires including GaAs, InP, In(...
In this work we investigate the variation of the crystal structure of gold-seeded III-V nanowires wi...
GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic...
we present results that provide fundamental insights on how to experimentally tailor the planar defe...
While III-V binary nanowires are now well controlled and their growth mechanisms reasonably well und...
We use metal - organic vapour phase epitaxy for growth investigations of epitaxial nanowires in III ...
InP and GaAs based nanowires were grown epitaxially on InP or GaAs (111)B substrates by metalorganic...
We present results that provide fundamental insights on how to experimentally tailor the planar defe...
InP and GaAs based nanowires were grown epitaxially on InP or GaAs (111)B substrates by metalorganic...
Crystal structure and defects have been shown to have a strong impact on III-V nanowire properties. ...
This thesis concerns growth and characterization of gold-particle seeded nanowires of III-V semicond...
Gallium arsenide (GaAs) nanowires were grown vertically on GaAs (111)B substrate by gold particle-as...
GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (11...
GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (11...
Gallium arsenide (GaAs) nanowires were grown vertically on GaAs (111)B substrate by gold particle-as...
The optical and structural properties of binary and ternary III-V nanowires including GaAs, InP, In(...