Implantation Angle Dependent Study of Vacancy Related Defect Profiles in Ion Implanted Silicon

Lay, M D H
McCallum, Jeffrey C
Jagadish, Chennupati

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Publication date

December 2015

DOI

10.1016/j.physb.2003.09.150

Publisher

Elsevier

ISSN

0921-4526

Journal

0921-4526

Citation count (estimate)

Abstract

The effect of implantation angle on the profile of the vacancy-phosphorus and divacancy centres (VP/V2-) in n-type 0.7-1.1 Ωcm Cz-grown (1 0 0) Si has been examined using depth profiling with deep-level transient spectroscopy. Samples were mounted with

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Implantation Angle Dependent Study of Vacancy Related Defect Profiles in Ion Implanted Silicon

Abstract

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Implantation Angle Dependent Study of Vacancy Related Defect Profiles in Ion Implanted Silicon

Abstract

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