Temperature dependence of blistering in hydrogen implanted Si and Ge
- Pyke, Daniel
- Elliman, Robert
- McCallum, Jeffrey C
Publication date
February 2016
DOI Publisher
Elsevier BV ISSN
0168-583X Journal
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Citation count (estimate)
1Abstract
The temperature dependence of hydrogen blistering rates are measured in (100) Si, (111) Si and (100) Ge substrates implanted with 40 keV H-ions to a fluence of 6 × 1016 H cm-2 using real-time imaging of samples during annealing. The time taken for blist
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