Semiconductor nanowires have proven a versatile platform for the realization of novel structures unachievable by traditional planar epitaxy techniques. Among these, the periodic arrangement of twin planes to form twinning superlattice structures has gene
We study the formation of GaAs nanowire - graphite nanoplatelet hybrid nanostructures. The quasi van...
Structure engineering is an emerging tool to control opto-electronic properties of semiconductors. R...
We report the controlled growth of planar GaAs semiconductor nanowires on (100) GaAs substrates usin...
We have studied twinning in GaAs nanowires grown via holes in a silica mask deposited on GaAs(111)B ...
Semiconductor nanowires show promise for use in nanoelectronics, fundamental electron transport stud...
GaAs nanowires (NWs) exhibit different, zinc blende (ZB) and wurzite (WZ), crystalline phases and on...
Highly perfect, twin-free GaAs nanosheets grown on (111)B surfaces by selective area growth (SAG) ar...
Highly perfect, twin-free GaAs nanosheets grown on (111)B surfaces by selective area growth (SAG) ar...
The effects of lamellar twinning in epitaxial particle-assisted GaAs B nanowires are investigated in...
We show control of the crystal structure of indium phosphide (InP) and gallium phosphide (GaP) nanow...
We review three novel techniques whereby the highly uniform two-dimensional films produced by molecu...
Contains fulltext : 72413.pdf (publisher's version ) (Closed access)4 p
The assembly of semiconductor nanowires and carbon nanotubes into nanoscale devices and circuits cou...
We have investigated the structural and optical properties of III-V nanowires, and axial and radial ...
We study the formation of GaAs nanowire - graphite nanoplatelet hybrid nanostructures. The quasi van...
Structure engineering is an emerging tool to control opto-electronic properties of semiconductors. R...
We report the controlled growth of planar GaAs semiconductor nanowires on (100) GaAs substrates usin...
We have studied twinning in GaAs nanowires grown via holes in a silica mask deposited on GaAs(111)B ...
Semiconductor nanowires show promise for use in nanoelectronics, fundamental electron transport stud...
GaAs nanowires (NWs) exhibit different, zinc blende (ZB) and wurzite (WZ), crystalline phases and on...
Highly perfect, twin-free GaAs nanosheets grown on (111)B surfaces by selective area growth (SAG) ar...
Highly perfect, twin-free GaAs nanosheets grown on (111)B surfaces by selective area growth (SAG) ar...
The effects of lamellar twinning in epitaxial particle-assisted GaAs B nanowires are investigated in...
We show control of the crystal structure of indium phosphide (InP) and gallium phosphide (GaP) nanow...
We review three novel techniques whereby the highly uniform two-dimensional films produced by molecu...
Contains fulltext : 72413.pdf (publisher's version ) (Closed access)4 p
The assembly of semiconductor nanowires and carbon nanotubes into nanoscale devices and circuits cou...
We have investigated the structural and optical properties of III-V nanowires, and axial and radial ...
We study the formation of GaAs nanowire - graphite nanoplatelet hybrid nanostructures. The quasi van...
Structure engineering is an emerging tool to control opto-electronic properties of semiconductors. R...
We report the controlled growth of planar GaAs semiconductor nanowires on (100) GaAs substrates usin...