Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deformation transmission electron microscopy. Both zinc-blende and wurtzite structured GaAs nanowires showed essentially elastic deformation until bending failur
In-situ deformation experiments were carried out in a transmission electron microscope to investigat...
The mechanical behavior of vertically aligned single-crystal GaAs nanowires grown on GaAs(111)B surf...
In-situ deformation experiments were carried out in a transmission electron microscope to investigat...
Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deforma...
Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deforma...
Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deforma...
Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deforma...
Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deforma...
Stacking faults (SFs) are commonly observed crystalline defects in III–V semiconductor nanowires (NW...
Stacking faults (SFs) are commonly observed crystalline defects in III–V semiconductor nanowires (NW...
Stacking faults (SFs) are commonly observed crystalline defects in III–V semiconductor nanowires (NW...
The mechanical behavior of vertically aligned single-crystal GaAs nanowires grown on GaAs(111)(B) su...
This article reviews in situ mechanical testing of crystalline nanowires in scanning and transmissio...
The structural versatility of semiconducting gallium arsenide (GaAs) nanowires (NWs) provides an exc...
The structural versatility of semiconducting gallium arsenide (GaAs) nanowires (NWs) provides an exc...
In-situ deformation experiments were carried out in a transmission electron microscope to investigat...
The mechanical behavior of vertically aligned single-crystal GaAs nanowires grown on GaAs(111)B surf...
In-situ deformation experiments were carried out in a transmission electron microscope to investigat...
Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deforma...
Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deforma...
Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deforma...
Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deforma...
Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deforma...
Stacking faults (SFs) are commonly observed crystalline defects in III–V semiconductor nanowires (NW...
Stacking faults (SFs) are commonly observed crystalline defects in III–V semiconductor nanowires (NW...
Stacking faults (SFs) are commonly observed crystalline defects in III–V semiconductor nanowires (NW...
The mechanical behavior of vertically aligned single-crystal GaAs nanowires grown on GaAs(111)(B) su...
This article reviews in situ mechanical testing of crystalline nanowires in scanning and transmissio...
The structural versatility of semiconducting gallium arsenide (GaAs) nanowires (NWs) provides an exc...
The structural versatility of semiconducting gallium arsenide (GaAs) nanowires (NWs) provides an exc...
In-situ deformation experiments were carried out in a transmission electron microscope to investigat...
The mechanical behavior of vertically aligned single-crystal GaAs nanowires grown on GaAs(111)B surf...
In-situ deformation experiments were carried out in a transmission electron microscope to investigat...