Electrical properties of atomic layer deposited Al 2 O 3 with anneal temperature for surface passivation

Suh, Dong Chul
Liang, Wensheng

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Publication date

February 2016

DOI

10.1016/j.tsf.2013.05.082

Publisher

Elsevier BV

ISSN

0040-6090

Journal

Thin Solid Films

Citation count (estimate)

Abstract

The electrical characteristics of Al2O3 layers prepared by the atomic layer deposition technique using O3, H 2O, and plasma O2, as oxidants are investigated through capacitance-voltage measurements of metal-insulator-semiconductor capacitors. Particular

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Electrical properties of atomic layer deposited Al 2 O 3 with anneal temperature for surface passivation

Abstract

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Electrical properties of atomic layer deposited Al 2 O 3 with anneal temperature for surface passivation

Abstract

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