The formation of voids in ion-implanted Ge was studied as a function of ion implantation energy and dose. (001) Ge substrates were self-implanted at energies of 20-300 keV to doses of 1.0 × 1013-1.0 × 1017 cm- 2. Transmission electron microscopy reveal
Positron annihilation spectroscopy was used to study defects created during the ion implantation and...
The purpose of this study has been to investigate the possibility of doping germanium using the tech...
The flat monocrystalline c-Ge wafers implanted by 108Ag + ions with the energy E = 30 keV, dose D = ...
The present paper reports on annealing of Ge implanted SiO2 films and emphasize the observation of v...
Germanium is known to present a peculiar lattice damage evolution under heavy mass ion irradiation. ...
© 2020 Elsevier Ltd The surface morphology of nanoporous Ge (PGe) layers formed by low-energy high-d...
Swift heavy ion (SHI) irradiation of damaged germanium (d-Ge) layer results in porous structure with...
© 2020, Pleiades Publishing, Ltd. Abstract: Results are presented of a study of the morphology of ge...
The formation of nanoscale voids in amorphous-germanium (a-Ge), and their size and shape evolution u...
As it is well known, Ge undergoes a peculiar surface nanostructuration under heavy ion implantation ...
The effects of sub-amorphizing ion implantation on damage accumulation and point defect migration in...
The effect of high electronic energy deposition in amorphous germanium has been studied experimental...
The past two decades, germanium has drawn international attention as one of the most promising mater...
Deep-level transient spectroscopy was used to investigate the electrically active defects introduced...
Ion induced porosity in Ge has been investigated with and without a cap layer for two ion species, G...
Positron annihilation spectroscopy was used to study defects created during the ion implantation and...
The purpose of this study has been to investigate the possibility of doping germanium using the tech...
The flat monocrystalline c-Ge wafers implanted by 108Ag + ions with the energy E = 30 keV, dose D = ...
The present paper reports on annealing of Ge implanted SiO2 films and emphasize the observation of v...
Germanium is known to present a peculiar lattice damage evolution under heavy mass ion irradiation. ...
© 2020 Elsevier Ltd The surface morphology of nanoporous Ge (PGe) layers formed by low-energy high-d...
Swift heavy ion (SHI) irradiation of damaged germanium (d-Ge) layer results in porous structure with...
© 2020, Pleiades Publishing, Ltd. Abstract: Results are presented of a study of the morphology of ge...
The formation of nanoscale voids in amorphous-germanium (a-Ge), and their size and shape evolution u...
As it is well known, Ge undergoes a peculiar surface nanostructuration under heavy ion implantation ...
The effects of sub-amorphizing ion implantation on damage accumulation and point defect migration in...
The effect of high electronic energy deposition in amorphous germanium has been studied experimental...
The past two decades, germanium has drawn international attention as one of the most promising mater...
Deep-level transient spectroscopy was used to investigate the electrically active defects introduced...
Ion induced porosity in Ge has been investigated with and without a cap layer for two ion species, G...
Positron annihilation spectroscopy was used to study defects created during the ion implantation and...
The purpose of this study has been to investigate the possibility of doping germanium using the tech...
The flat monocrystalline c-Ge wafers implanted by 108Ag + ions with the energy E = 30 keV, dose D = ...
DOI
Add to ORKG