We report on the optical trapping characteristics of InP nanowires with dimensions of 30 (±6) nm in diameter and 2 - 15 μm in length. We describe a method for calibrating the absolute position of individual nanowires relative to the trapping center usi
We demonstrate, for the first time, the trapping and manipulation of individual Si nanowires by ligh...
We demonstrate experimentally that arrays of base-tapered InP nanowires on top of an InP substrate f...
Semiconducting nanowires, such as ZnO and Si, are used in the fields of nanophotonics and nanoelectr...
We report on the optical trapping characteristics of InP nanowires with dimensions of 30 (±6) nm in ...
Axially resolved microphotoluminescence mapping of semiconductor nanowires held in an optical tweeze...
We report on the optical characterisation of single indium phosphide (InP) semiconductor nanowires t...
In this thesis I describe a number of novel techniques of combining dynamic optical tweezers with sp...
We present a novel method for spatial mapping of the luminescent properties of single optically trap...
We report a novel method for using a spatial light modulator (SLM) to spatially map the luminescent ...
Abstract: We demonstrate in-situ Raman measurements of individual silicon nanowires (100 nm diameter...
A substrate-free approach of semiconductor nanowire growth has been achieved by the aerotaxy techniq...
We report the two-photon luminescence emission (2PE) study of single indium phosphide (InP) semicond...
Abstract Optoelectronic tweezers is a new optical manipulation technique to trap particles with size...
We have studied the interaction of light with an array of vertically oriented III-V semiconductor na...
As society continues to push for devices that are faster, cheaper, and more efficient, new technolog...
We demonstrate, for the first time, the trapping and manipulation of individual Si nanowires by ligh...
We demonstrate experimentally that arrays of base-tapered InP nanowires on top of an InP substrate f...
Semiconducting nanowires, such as ZnO and Si, are used in the fields of nanophotonics and nanoelectr...
We report on the optical trapping characteristics of InP nanowires with dimensions of 30 (±6) nm in ...
Axially resolved microphotoluminescence mapping of semiconductor nanowires held in an optical tweeze...
We report on the optical characterisation of single indium phosphide (InP) semiconductor nanowires t...
In this thesis I describe a number of novel techniques of combining dynamic optical tweezers with sp...
We present a novel method for spatial mapping of the luminescent properties of single optically trap...
We report a novel method for using a spatial light modulator (SLM) to spatially map the luminescent ...
Abstract: We demonstrate in-situ Raman measurements of individual silicon nanowires (100 nm diameter...
A substrate-free approach of semiconductor nanowire growth has been achieved by the aerotaxy techniq...
We report the two-photon luminescence emission (2PE) study of single indium phosphide (InP) semicond...
Abstract Optoelectronic tweezers is a new optical manipulation technique to trap particles with size...
We have studied the interaction of light with an array of vertically oriented III-V semiconductor na...
As society continues to push for devices that are faster, cheaper, and more efficient, new technolog...
We demonstrate, for the first time, the trapping and manipulation of individual Si nanowires by ligh...
We demonstrate experimentally that arrays of base-tapered InP nanowires on top of an InP substrate f...
Semiconducting nanowires, such as ZnO and Si, are used in the fields of nanophotonics and nanoelectr...