Add to ORKGWurtzite GaN epilayers bombarded with a wide range of ion species (10 keV 1H, 40 keV 12C 50 keV 16O, 600 keV 28Si. 130 keV 63Cu, 200 keV 107Ag, 300 keV 197Au, and 500 keV 209Bi) are studied by a combination of Rutherford backscattering/channeling (RBS/C
We summarize here our recent results on structural and optical characteristics of wurtzite GaN films...
As Rutherford backscattering spectrometry in channeling mode (RBS/C) is an efficient technique for c...
Epitaxial AlGaN/GaN layers grown by molecular beam epitaxy (MBE) on SiC substrates were irradiated w...
The effect of ion species on the damage buildup behavior in wurtzite GaN under bombardment at liquid...
Wurtzite GaN epilayers bombarded with a wide range of ion species (10 keV H-1, 40 keV C-12, 50 keV O...
The effect of ion species on the damage buildup behavior in wurtzite GaN under bombardment at liquid...
The damage buildup until amorphization in wurtzite GaN films under kev light (12C) and heavy (197Au)...
The effects of implant conditions on the damage build-up in wurtzite GaN films are studied by Ruther...
Damage accumulation in wurtzite GaN films bombarded with 0.5 MeV Bi₁ and 1 MeV Bi₂ ions (the so-call...
International audienceWe investigated the response of wurzite GaN thin films to energetic ion irradi...
The structural characteristics of wurtzite GaN films bombarded up to high ion doses are studied by a...
Damage and microstructure evolution in gallium nitride (GaN) under Au(+) ion irradiation has been in...
Single-crystal GaN films grown on AlN buffer layers previously deposited on 6H-SiC(0001) were studie...
The effects of elevated-temperature ion bombardment of wurtzite GaN films preamorphized by ion impla...
We summarize here our recent results on structural and optical characteristics of wurtzite GaN films...
As Rutherford backscattering spectrometry in channeling mode (RBS/C) is an efficient technique for c...
Epitaxial AlGaN/GaN layers grown by molecular beam epitaxy (MBE) on SiC substrates were irradiated w...
The effect of ion species on the damage buildup behavior in wurtzite GaN under bombardment at liquid...
Wurtzite GaN epilayers bombarded with a wide range of ion species (10 keV H-1, 40 keV C-12, 50 keV O...
The effect of ion species on the damage buildup behavior in wurtzite GaN under bombardment at liquid...
The damage buildup until amorphization in wurtzite GaN films under kev light (12C) and heavy (197Au)...
The effects of implant conditions on the damage build-up in wurtzite GaN films are studied by Ruther...
Damage accumulation in wurtzite GaN films bombarded with 0.5 MeV Bi₁ and 1 MeV Bi₂ ions (the so-call...
International audienceWe investigated the response of wurzite GaN thin films to energetic ion irradi...
The structural characteristics of wurtzite GaN films bombarded up to high ion doses are studied by a...
Damage and microstructure evolution in gallium nitride (GaN) under Au(+) ion irradiation has been in...
Single-crystal GaN films grown on AlN buffer layers previously deposited on 6H-SiC(0001) were studie...
The effects of elevated-temperature ion bombardment of wurtzite GaN films preamorphized by ion impla...
We summarize here our recent results on structural and optical characteristics of wurtzite GaN films...
As Rutherford backscattering spectrometry in channeling mode (RBS/C) is an efficient technique for c...
Epitaxial AlGaN/GaN layers grown by molecular beam epitaxy (MBE) on SiC substrates were irradiated w...