Structural Modifications in Amorphous Ge Produced by Ion Implantation
- Desnica-Frankovic, I D
- Furic, K
- Desnica, U V
- Ridgway, Mark C
- Glover, Christopher
Publication date
December 2015
DOI Publisher
Elsevier BV Journal
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and AtomsAbstract
Raman spectroscopy was used to analyze structural modifications of monocrystalline Ge implanted with 3 × 1012 to 3 × 1016 cm-274Ge ions, at either room temperature (RT) or liquid nitrogen (LN) temperature. In all implanted samples, beyond the amorphiza
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