Add to ORKGWe review various III-V compound semiconductor nanowires grown by metalorganic chemical vapor deposition. Transmission and scanning electron microscopy, micro-photoluminescence and micro-Raman spectroscopy have been used to understand the crystal structure, light emission and band structure
GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (11...
GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (11...
The optical and structural properties of binary and ternary III-V nanowires including GaAs, InP, In(...
We review various III-V compound semiconductor nanowires grown by metalorganic chemical vapor deposi...
We review various III-V compound semiconductor nanowires grown by metalorganic chemical vapor deposi...
We review various III-V compound semiconductor nanowires grown by MOCVD, mainly focusing on their ph...
We review GaAs and InP nanowires and GaAs based nanowire heterostructures grown on (111)B substrates...
We review GaAs and InP nanowires and GaAs based nanowire heterostructures grown on (111)B substrates...
We review various GaAs-based axial and radial nanowire heterostructures grown on (1 1 1)B GaAs subst...
We review various GaAs-based axial and radial nanowire heterostructures grown on (1 1 1)B GaAs subst...
We review GaAs nanowires and related nanowire heterostructures grown on Si (111) substrates by metal...
We have investigated the structural and optical properties of III-V nanowires grown by metalorganic ...
We have investigated the structural and optical properties of III-V nanowires grown by metalorganic ...
GaAs, InAs and InP based nanowires were grown epitaxially on (111)B substrates by metalorganic chemi...
Summary form only given. In the last few years, semiconductor nanowires (NWs) have attracted intensi...
GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (11...
GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (11...
The optical and structural properties of binary and ternary III-V nanowires including GaAs, InP, In(...
We review various III-V compound semiconductor nanowires grown by metalorganic chemical vapor deposi...
We review various III-V compound semiconductor nanowires grown by metalorganic chemical vapor deposi...
We review various III-V compound semiconductor nanowires grown by MOCVD, mainly focusing on their ph...
We review GaAs and InP nanowires and GaAs based nanowire heterostructures grown on (111)B substrates...
We review GaAs and InP nanowires and GaAs based nanowire heterostructures grown on (111)B substrates...
We review various GaAs-based axial and radial nanowire heterostructures grown on (1 1 1)B GaAs subst...
We review various GaAs-based axial and radial nanowire heterostructures grown on (1 1 1)B GaAs subst...
We review GaAs nanowires and related nanowire heterostructures grown on Si (111) substrates by metal...
We have investigated the structural and optical properties of III-V nanowires grown by metalorganic ...
We have investigated the structural and optical properties of III-V nanowires grown by metalorganic ...
GaAs, InAs and InP based nanowires were grown epitaxially on (111)B substrates by metalorganic chemi...
Summary form only given. In the last few years, semiconductor nanowires (NWs) have attracted intensi...
GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (11...
GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (11...
The optical and structural properties of binary and ternary III-V nanowires including GaAs, InP, In(...