This paper reports optical and nanomechanical properties of predominantly a-axis oriented AlN thin films. These films were deposited by reactive DC magnetron sputtering technique at an optimal target to substrate distance of 180 mm. X-ray rocking curve (FWHM = 52 arcsec) studies confirmed the preferred orientation. Spectroscopic ellipsometry revealed a refractive index of 1.93 at a wavelength of 546 nm. The hardness and elastic modulus of these films were 17 and 190 GPa, respectively, which are much higher than those reported earlier can be useful for piezoelectric films in bulk acoustic wave resonators
[[abstract]]This work studies the relationship between the deposition process parameters and the pro...
International audienceAluminum nitride AlN thin films were deposited at room temperature by pulsed l...
International audienceLow-temperature Aluminum Nitride (AlN) thin films with a thickness of 3 μm wer...
This paper reports optical and nanomechanical properties of predominantly a-axis oriented AlN thin f...
This paper reports optical and nanomechanical properties of predominantly a-axis oriented AlN thin f...
[[abstract]]This work studies the relationship between the deposition process parameters and the pro...
[[abstract]]Effect of buffer layer on the characteristics of the AlN thin films deposited on SiNx/Si...
International audienceIn this work, aluminium nitride (AlN) films were deposited on silicon substrat...
[[abstract]]This work studies the relationship between the deposition process parameters and the pro...
International audienceIn this work, aluminium nitride (AlN) films were deposited on silicon substrat...
International audienceAluminum nitride AlN thin films were deposited at room temperature by pulsed l...
International audienceIn this work, aluminium nitride (AlN) films were deposited on silicon substrat...
Nanoindentation measurements along with atomic force microscopy, X-ray diffraction, and residual str...
International audienceAluminum nitride AlN thin films were deposited at room temperature by pulsed l...
International audienceIn this work, aluminium nitride (AlN) films were deposited on silicon substrat...
[[abstract]]This work studies the relationship between the deposition process parameters and the pro...
International audienceAluminum nitride AlN thin films were deposited at room temperature by pulsed l...
International audienceLow-temperature Aluminum Nitride (AlN) thin films with a thickness of 3 μm wer...
This paper reports optical and nanomechanical properties of predominantly a-axis oriented AlN thin f...
This paper reports optical and nanomechanical properties of predominantly a-axis oriented AlN thin f...
[[abstract]]This work studies the relationship between the deposition process parameters and the pro...
[[abstract]]Effect of buffer layer on the characteristics of the AlN thin films deposited on SiNx/Si...
International audienceIn this work, aluminium nitride (AlN) films were deposited on silicon substrat...
[[abstract]]This work studies the relationship between the deposition process parameters and the pro...
International audienceIn this work, aluminium nitride (AlN) films were deposited on silicon substrat...
International audienceAluminum nitride AlN thin films were deposited at room temperature by pulsed l...
International audienceIn this work, aluminium nitride (AlN) films were deposited on silicon substrat...
Nanoindentation measurements along with atomic force microscopy, X-ray diffraction, and residual str...
International audienceAluminum nitride AlN thin films were deposited at room temperature by pulsed l...
International audienceIn this work, aluminium nitride (AlN) films were deposited on silicon substrat...
[[abstract]]This work studies the relationship between the deposition process parameters and the pro...
International audienceAluminum nitride AlN thin films were deposited at room temperature by pulsed l...
International audienceLow-temperature Aluminum Nitride (AlN) thin films with a thickness of 3 μm wer...