Photoluminescence Imaging Diagnosis of Particulate Iron Contamination Derived From HF Dip and Thermal Oxidation

Baker-Finch, Simeon
McIntosh, Keith

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Publication date

February 2016

DOI

10.1109/JPHOTOV.2011.2165699

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Journal

IEEE Journal of Photovoltaics

Abstract

Photoluminescence (PL) imaging identifies contamination occurring in thermal oxidation of p-type crystalline silicon. PL images indicate that the contamination decreases the carrier lifetime from ∼350 to 50 μs and that it is radially symmetric with a

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Photoluminescence Imaging Diagnosis of Particulate Iron Contamination Derived From HF Dip and Thermal Oxidation

Abstract

Extracted data

Photoluminescence Imaging Diagnosis of Particulate Iron Contamination Derived From HF Dip and Thermal Oxidation

Abstract

Extracted data

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