The effect of high electronic energy deposition in amorphous germanium has been studied experimentally by Au irradiation with ion energies of up to 185 MeV and different angles of incidence and by molecular dynamics computer simulations. In both cases, the energy deposition leads to void formation accompanied by strong swelling of the amorphous germanium. The simulation results prove that the formation of the voids is mainly based on a shock wave mechanism and the swelling is determined by the competing processes of the formation and growth of voids on the one hand and the shrinking and annihilation of voids on the other hand. In full agreement between experiment and simulation, the amount of the swelling is a linear function of the total e...
Hydrogenated amorphous germanium films were deposited by r.f. glow discharge on the powered electrod...
The formation of voids in ion-implanted Ge was studied as a function of ion implantation energy and ...
International audienceUsing Molecular Dynamics we study the role of electronic excitations in the ra...
Swift heavy-ion (SHI) irradiation of amorphous germanium (a-Ge) layers leads to a strong volume expa...
cited By 2International audienceDamage accumulation and amorphization mechanisms by means of ion imp...
The formation of nanoscale voids in amorphous-germanium (a-Ge), and their size and shape evolution u...
Changes in the elastic properties of Ge induced by room-temperature irradiation with 3.5-MeV Kr ions...
Swift heavy ion (SHI) irradiation of damaged germanium (d-Ge) layer results in porous structure with...
The formation of ion tracks was studied in amorphous Ge for irradiation with Au ions with energies o...
International audienceThe controlled doping of germanium by ion implantation is a process which requ...
Ion tracks formed in amorphous Ge by swift heavy-ion irradiation have been identified with experimen...
Swift heavy ion (SHI) irradiation of amorphous Si (a-Si) at non-perpendicular incidence leads to non...
Heavy-ion irradiation of crystalline germanium (c-Ge) results in the formation of a homogeneous amor...
Electronic excitation (dE/dx)e due to swift-heavy-ion irradiation induces giant plastic deformation ...
Hydrogenated amorphous germanium films were deposited by r.f. glow discharge on the powered electrod...
The formation of voids in ion-implanted Ge was studied as a function of ion implantation energy and ...
International audienceUsing Molecular Dynamics we study the role of electronic excitations in the ra...
Swift heavy-ion (SHI) irradiation of amorphous germanium (a-Ge) layers leads to a strong volume expa...
cited By 2International audienceDamage accumulation and amorphization mechanisms by means of ion imp...
The formation of nanoscale voids in amorphous-germanium (a-Ge), and their size and shape evolution u...
Changes in the elastic properties of Ge induced by room-temperature irradiation with 3.5-MeV Kr ions...
Swift heavy ion (SHI) irradiation of damaged germanium (d-Ge) layer results in porous structure with...
The formation of ion tracks was studied in amorphous Ge for irradiation with Au ions with energies o...
International audienceThe controlled doping of germanium by ion implantation is a process which requ...
Ion tracks formed in amorphous Ge by swift heavy-ion irradiation have been identified with experimen...
Swift heavy ion (SHI) irradiation of amorphous Si (a-Si) at non-perpendicular incidence leads to non...
Heavy-ion irradiation of crystalline germanium (c-Ge) results in the formation of a homogeneous amor...
Electronic excitation (dE/dx)e due to swift-heavy-ion irradiation induces giant plastic deformation ...
Hydrogenated amorphous germanium films were deposited by r.f. glow discharge on the powered electrod...
The formation of voids in ion-implanted Ge was studied as a function of ion implantation energy and ...
International audienceUsing Molecular Dynamics we study the role of electronic excitations in the ra...