Ion-induced collisions produce athermal atomic movements at and around the surface or interface, inducing step formation and modifying growth conditions. The latter may be controlled by varying the temperature and ion-beam characteristics, guiding the sy
Amorphization has been studied in electron- (e/sup -/) and ion-irradiated Si. Si irradiated at <10 K...
Ion-beam-induced epitaxial crystallization of amorphous Si implanted with Fe to 18 at. % peak concen...
Ion beam irradiation of a-Si/Fe/c-Si trilayers with 350-MeV Au ions and of Fe/a-Si bilayers with 250...
Ion-induced collisions produce athermal atomic movements at and around the surface or interface, ind...
New empirical equations describing the rate of ion-induced crystallization at a Si crystal/amorphous...
We have studied the ion bombardment induced amorphous-to-crystal transition in silicon using molecul...
The crystallization rate of surface amorphous silicon layers irradiated with 7 MeV Au4+ ions has bee...
Evolution of amorphous zones (a-zones) in Si during elevated temperature ion/electron bombardment is...
We report on in-situ investigations of a recrystallization process of amorphous and damaged crystall...
MeV ion-beam induced crystallization (IBIC) and amorphization of silicon have been investigated. Va...
Epitaxial crystal growth using an energy- and mass-analysed ion beam can provide insights into the f...
The surface structural changes of silicon implanted with heavy ions and ion beam crystallized have b...
High-temperature induced nano-crystal formation in ion beam-induced amorphous silicon ripple
Abstract: A study of the interactions of energetic argon ions with silicon surfaces using molecular ...
The formation of amorphous silicon in crystalline silicon by bombardment with light (Si) and heavy (...
Amorphization has been studied in electron- (e/sup -/) and ion-irradiated Si. Si irradiated at <10 K...
Ion-beam-induced epitaxial crystallization of amorphous Si implanted with Fe to 18 at. % peak concen...
Ion beam irradiation of a-Si/Fe/c-Si trilayers with 350-MeV Au ions and of Fe/a-Si bilayers with 250...
Ion-induced collisions produce athermal atomic movements at and around the surface or interface, ind...
New empirical equations describing the rate of ion-induced crystallization at a Si crystal/amorphous...
We have studied the ion bombardment induced amorphous-to-crystal transition in silicon using molecul...
The crystallization rate of surface amorphous silicon layers irradiated with 7 MeV Au4+ ions has bee...
Evolution of amorphous zones (a-zones) in Si during elevated temperature ion/electron bombardment is...
We report on in-situ investigations of a recrystallization process of amorphous and damaged crystall...
MeV ion-beam induced crystallization (IBIC) and amorphization of silicon have been investigated. Va...
Epitaxial crystal growth using an energy- and mass-analysed ion beam can provide insights into the f...
The surface structural changes of silicon implanted with heavy ions and ion beam crystallized have b...
High-temperature induced nano-crystal formation in ion beam-induced amorphous silicon ripple
Abstract: A study of the interactions of energetic argon ions with silicon surfaces using molecular ...
The formation of amorphous silicon in crystalline silicon by bombardment with light (Si) and heavy (...
Amorphization has been studied in electron- (e/sup -/) and ion-irradiated Si. Si irradiated at <10 K...
Ion-beam-induced epitaxial crystallization of amorphous Si implanted with Fe to 18 at. % peak concen...
Ion beam irradiation of a-Si/Fe/c-Si trilayers with 350-MeV Au ions and of Fe/a-Si bilayers with 250...
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