Sapphire was implanted with Pt ions at room temperature and at liquid-nitrogen temperature, inducing correspondingly different amounts of accumulated damage in the target crystals. Subsequent thermal annealing at 1000 and at 1600 °C resulted in Pt preci
The effects of implanted oxygen on the damage accumulation in sapphire which was previously implante...
Thermal exfoliation and crystallographic transformation of single-crystal metal oxides induced by He...
Defect production and optical activity of Er-implanted α-Al2O3 were studied as a function of implant...
The orientation relationship, crystallography and structure of heterointerfaces influence their ener...
Sapphire single crystals with (0 0 0 1) and (0 2 2̄ 1) orientations were implanted at room temperatu...
<p>Each sample was deposited with 10 nm thick Pt layer and annealed between 550 and 950°C for the id...
Ion beam modification of thermal shock resistance of sapphire single crystals with various crystallo...
Exfoliation is a technique used to remove a thin, uniform layer of material from the bulk that invol...
Single crystal sapphire (Al2O3) samples implanted with 110 keV He and irradiated at 320 K by Pb-208(...
Single crystals of α-Al2O3 with different orientations were implanted with several fluences of Ti an...
Ion implantation is a well established and widely used technique to change selectively the near surf...
The range of microstructures and properties of sapphire (single crystalline Al{sub 2}O{sub 3}) that ...
A new method for producing controlled-geometry, controlled-crystallography, cracklike defects using ...
Metallic nanostructures (NSs) have been widely adapted in various applications and their physical, c...
International audienceContinuous thin films of Pt on A-plane 1 1 2 0 À Á sapphire substrates were de...
The effects of implanted oxygen on the damage accumulation in sapphire which was previously implante...
Thermal exfoliation and crystallographic transformation of single-crystal metal oxides induced by He...
Defect production and optical activity of Er-implanted α-Al2O3 were studied as a function of implant...
The orientation relationship, crystallography and structure of heterointerfaces influence their ener...
Sapphire single crystals with (0 0 0 1) and (0 2 2̄ 1) orientations were implanted at room temperatu...
<p>Each sample was deposited with 10 nm thick Pt layer and annealed between 550 and 950°C for the id...
Ion beam modification of thermal shock resistance of sapphire single crystals with various crystallo...
Exfoliation is a technique used to remove a thin, uniform layer of material from the bulk that invol...
Single crystal sapphire (Al2O3) samples implanted with 110 keV He and irradiated at 320 K by Pb-208(...
Single crystals of α-Al2O3 with different orientations were implanted with several fluences of Ti an...
Ion implantation is a well established and widely used technique to change selectively the near surf...
The range of microstructures and properties of sapphire (single crystalline Al{sub 2}O{sub 3}) that ...
A new method for producing controlled-geometry, controlled-crystallography, cracklike defects using ...
Metallic nanostructures (NSs) have been widely adapted in various applications and their physical, c...
International audienceContinuous thin films of Pt on A-plane 1 1 2 0 À Á sapphire substrates were de...
The effects of implanted oxygen on the damage accumulation in sapphire which was previously implante...
Thermal exfoliation and crystallographic transformation of single-crystal metal oxides induced by He...
Defect production and optical activity of Er-implanted α-Al2O3 were studied as a function of implant...