Effects of annealing on the properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors

Jolley, Greg
Xiao, B
Fu, Lan
Jagadish, Chennupati
Tan, Hark Hoe

Open link

Publication date

December 2015

DOI

10.1088/0022-3727/42/11/115103

Publisher

IOP Publishing

ISSN

0022-3727

Journal

Journal of Physics D Applied Physics

Abstract

We report on the device parameters of In0.5Ga 0.5As/GaAs/Al0.2Ga0.8As quantum-dots- in-a-well infrared photodetectors annealed at various temperatures from 700 to 850 °C. The temperature dependent dark current-voltage characteristics are found to have

Extracted data

We use cookies to provide a better user experience.

Data Protection

Effects of annealing on the properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors

Abstract

Extracted data

Effects of annealing on the properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors

Abstract

Extracted data

Related items

Related items