We investigate how to tailor the structural, crystallographic and optical properties of GaAs nanowires. Nanowires were grown by Au nanoparticle-catalyzed metalorganic chemical vapor deposition. A high arsine flow rate, that is, a high ratio of group V t
ABSTRACT: Controlling the crystal quality and growth orientation of high performance III−V compound ...
GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (11...
We report the controlled growth of planar GaAs semiconductor nanowires on (100) GaAs substrates usin...
We investigate how to tailor the structural, crystallographic and optical properties of GaAs nanowir...
We investigate how to tailor the structural, crystallographic and optical properties of GaAs nanowir...
We investigate how to tailor the structural, crystallographic and optical properties of GaAs nanowir...
We investigate how to tailor the structural, crystallographic and optical properties of GaAs nanowir...
We investigate how growth parameters may be chosen to obtain high quality GaAs nanowires suitable fo...
We investigate how growth parameters may be chosen to obtain high quality GaAs nanowires suitable fo...
In this study, we demonstrate that by merely limiting the As flux, the growth behavior and structura...
GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic...
In this study, we demonstrated that by using annealed Au thin films as catalysts, high-density, defe...
Gallium arsenide (GaAs) nanowires were grown vertically on GaAs (111)B substrate by gold particle-as...
Gallium arsenide (GaAs) nanowires were grown vertically on GaAs (111)B substrate by gold particle-as...
GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (11...
ABSTRACT: Controlling the crystal quality and growth orientation of high performance III−V compound ...
GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (11...
We report the controlled growth of planar GaAs semiconductor nanowires on (100) GaAs substrates usin...
We investigate how to tailor the structural, crystallographic and optical properties of GaAs nanowir...
We investigate how to tailor the structural, crystallographic and optical properties of GaAs nanowir...
We investigate how to tailor the structural, crystallographic and optical properties of GaAs nanowir...
We investigate how to tailor the structural, crystallographic and optical properties of GaAs nanowir...
We investigate how growth parameters may be chosen to obtain high quality GaAs nanowires suitable fo...
We investigate how growth parameters may be chosen to obtain high quality GaAs nanowires suitable fo...
In this study, we demonstrate that by merely limiting the As flux, the growth behavior and structura...
GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic...
In this study, we demonstrated that by using annealed Au thin films as catalysts, high-density, defe...
Gallium arsenide (GaAs) nanowires were grown vertically on GaAs (111)B substrate by gold particle-as...
Gallium arsenide (GaAs) nanowires were grown vertically on GaAs (111)B substrate by gold particle-as...
GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (11...
ABSTRACT: Controlling the crystal quality and growth orientation of high performance III−V compound ...
GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (11...
We report the controlled growth of planar GaAs semiconductor nanowires on (100) GaAs substrates usin...