Suppression of the internal electric field effects in ZnO/Zn0.7Mg0.3O quantum wells by ion-implantation induced intermixing
- Davis, Jeff A
- Dao, Lap Van
- Wen, X
- Ticknor, C
- Hannaford, Peter
- Coleman, Victoria A
- Jagadish, Chennupati
- Koike, Kazuto
- Sasa, Shigehiko
- Inoue, Masataka
- Yano, Mitsuaki
- Tan, Hark Hoe
Publication date
December 2015
DOI Publisher
IOP Publishing ISSN
0957-4484 Journal
Nanotechnology Citation count (estimate)
21Abstract
Strong suppression of the effects caused by the internal electric field in ZnO/ZnMgO quantum wells following ion-implantation and rapid thermal annealing, is revealed by photoluminescence, time-resolved photoluminescence, and band structure calculations
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