Ge nanocrystals (NCs) grown by ion implantation in amorphous silica matrices were irradiated with 5 MeV Si ions over a different fluence range (2 × 1011-2 × 1013 cm-2) than previously reported. Size and depth distributions as well as structural disorde
High-resolution SEM images of germanium nanocrystals (Ge-nc) synthesized by ion implantation in fuse...
The influence of fast neutron irradiation on the structure and spatial distribution of Ge nanocryst...
[[abstract]]The structural evolution in Ge+ implantation amorphous Si has been investigated by high-...
Ge nanocrystals (NCs) grown by ion implantation in amorphous silica matrices were irradiated with 5 ...
Extended x-ray absorption fine structure (EXAFS) measurements have been used to characterize the ion...
One of the key reasons why nanoscale materials behave differently from their bulk counterparts is th...
A combination of conventional and synchrotron-based techniques has been used to characterize the siz...
A combination of conventional and synchrotron-based techniques has been used to characterize the siz...
Ge nanocrystals were produced in SiO2 by ion implantation and thermal annealing. Size and depth dist...
Finite-size effects become significant in nanoscale materials. When a nanocrystal is surrounded by a...
The formation and structure of Ge nanocrystals produced in silica by ion-implantation and thermal an...
Silica-embedded Ge nanoparticles (NPs) of different sizes irradiated with swift heavy ions (SHIs) at...
Ge nanocrystals formed in silica by implantation with 1.0 MeV Ge ions and subsequent annealing at 11...
We have synthesized Ge nanocrystals of sizes 4, 8, and 12 nm by ion-implanting Ge+ ions into thermal...
Germanium nanocrystals embedded in SiO2 have been formed by ion implantation and subsequent thermal ...
High-resolution SEM images of germanium nanocrystals (Ge-nc) synthesized by ion implantation in fuse...
The influence of fast neutron irradiation on the structure and spatial distribution of Ge nanocryst...
[[abstract]]The structural evolution in Ge+ implantation amorphous Si has been investigated by high-...
Ge nanocrystals (NCs) grown by ion implantation in amorphous silica matrices were irradiated with 5 ...
Extended x-ray absorption fine structure (EXAFS) measurements have been used to characterize the ion...
One of the key reasons why nanoscale materials behave differently from their bulk counterparts is th...
A combination of conventional and synchrotron-based techniques has been used to characterize the siz...
A combination of conventional and synchrotron-based techniques has been used to characterize the siz...
Ge nanocrystals were produced in SiO2 by ion implantation and thermal annealing. Size and depth dist...
Finite-size effects become significant in nanoscale materials. When a nanocrystal is surrounded by a...
The formation and structure of Ge nanocrystals produced in silica by ion-implantation and thermal an...
Silica-embedded Ge nanoparticles (NPs) of different sizes irradiated with swift heavy ions (SHIs) at...
Ge nanocrystals formed in silica by implantation with 1.0 MeV Ge ions and subsequent annealing at 11...
We have synthesized Ge nanocrystals of sizes 4, 8, and 12 nm by ion-implanting Ge+ ions into thermal...
Germanium nanocrystals embedded in SiO2 have been formed by ion implantation and subsequent thermal ...
High-resolution SEM images of germanium nanocrystals (Ge-nc) synthesized by ion implantation in fuse...
The influence of fast neutron irradiation on the structure and spatial distribution of Ge nanocryst...
[[abstract]]The structural evolution in Ge+ implantation amorphous Si has been investigated by high-...