Compound Semiconductor Nanowires for Optoelectronic Device Applications
- Gao, Qiang
- Joyce, Hannah J
- Paiman, Suriati
- Kang, Jung-Hyun
- Jackson, Howard E
- Smith, Leigh M
- Yarrison-Rice, Jan M
- Zou, Jin
- Jagadish, Chennupati
- Tan, Hark Hoe
Publication date
February 2016
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
GaAs, InAs and InP based nanowires were grown epitaxially on (111)B substrates by metalorganic chemi-cal vapor deposition. Growth mechanism, microstructure and optical properties of these nanowires will be dis-cussed in this talk
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