Role of F on the Electrical Activation of As in Ge
- Impellizzeri, G
- Napolitani, E
- Boninelli, S
- Sullivan, James
- Roberts, Jason
- Buckman, Stephen
- Ruffell, Simon
- Priolo, Francesco
- Privitera, V
Publication date
December 2015
DOI Publisher
The Electrochemical Society Journal
ECS Journal of Solid State Science and TechnologyAbstract
Fluorine is known to strongly influence the dopant diffusion and electrical activation in Si. Similar effects might be exploited in Ge for optimizing its application in microelectronics. The role of F on the electrical activation of As in Ge after therma
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