Add to ORKGExtended defects created in Si by ion implantation to doses below the amorphization threshold have been studied after annealing at 800 °C for 15 min. The implant species were the group IV elements Si, Ge, and Sn, and structural defects created by simila
Ion channeling and cross-sectional transmission electron microscopy were used to study the extent an...
The objective of this study is to gain some insight into point defect nobilities in silicon nitride ...
The influence of germanium ion current density on the residual defects in ion implanted Si/SiGe hete...
Extended defects created in Si by ion implantation to doses below the amorphization threshold have b...
Cross-sectional transmission electron microscopy was used to study defect formation and evolution in...
As the dimensions of semiconductor devices shrink down to 0.1#mu#m and beyond, low energy ion implan...
The nature of defects resulting from the implantation of phosphorous ions into doped silicon and a m...
Evolution of extended defects during annealing of MeV ion-implanted p-type Si has been characterized...
The microstructure of silicon on defect layer, a new type of silicon-on-insulator material using pro...
The eect of sample thickness on the nucleation, growth and dissolution of {311} defects in non-amorp...
Defects produced by ion implantation in Si and Ge, their evolution upon post-implantation annealing,...
We have used electrical measurements Deep level transient spectroscopy (DLTS) complemented by high-r...
The electrical and structural characteristics of secondary defects in regrown amorphous layers forme...
Buried damaged or amorphous layers were produced by implantation of 1 MeV As+ ions into Si (100) at ...
International audienceDefects in crystalline silicon are often detrimental for devices notably affec...
Ion channeling and cross-sectional transmission electron microscopy were used to study the extent an...
The objective of this study is to gain some insight into point defect nobilities in silicon nitride ...
The influence of germanium ion current density on the residual defects in ion implanted Si/SiGe hete...
Extended defects created in Si by ion implantation to doses below the amorphization threshold have b...
Cross-sectional transmission electron microscopy was used to study defect formation and evolution in...
As the dimensions of semiconductor devices shrink down to 0.1#mu#m and beyond, low energy ion implan...
The nature of defects resulting from the implantation of phosphorous ions into doped silicon and a m...
Evolution of extended defects during annealing of MeV ion-implanted p-type Si has been characterized...
The microstructure of silicon on defect layer, a new type of silicon-on-insulator material using pro...
The eect of sample thickness on the nucleation, growth and dissolution of {311} defects in non-amorp...
Defects produced by ion implantation in Si and Ge, their evolution upon post-implantation annealing,...
We have used electrical measurements Deep level transient spectroscopy (DLTS) complemented by high-r...
The electrical and structural characteristics of secondary defects in regrown amorphous layers forme...
Buried damaged or amorphous layers were produced by implantation of 1 MeV As+ ions into Si (100) at ...
International audienceDefects in crystalline silicon are often detrimental for devices notably affec...
Ion channeling and cross-sectional transmission electron microscopy were used to study the extent an...
The objective of this study is to gain some insight into point defect nobilities in silicon nitride ...
The influence of germanium ion current density on the residual defects in ion implanted Si/SiGe hete...