Comparison of photoexcited p-InAs THz radiation source with conventional thermal radiation sources

P-type InAs excited by ultrashort optical pulses has been shown to be a strong emitter of terahertz radiation. In a direct comparison between a p-InAs emitter and conventional thermal radiationsources, we demonstrate that under typical excitation conditions p-InAs produces more radiation below 1.2 THz than a globar. By treating the globar as a blackbody emitter we calibrate a siliconbolometer which is used to determine the power of the p-InAs emitter. The emitted terahertz power was found to be 98±10 nW in this experiment