Vegard’s law and inductively coupled plasma atomic emission spectrometry were employed to determine the Mg composition in MgₓZn₁ˍₓO layers deposited on 6H–SiC substrates. With the increase of Mg composition in MgₓZn₁ˍₓO layers, the c-axis length decreased by 5.2048−0.072x, while the a-axis length increased to 3.2491+0.047x. The lattice constants estimated by Vegard’s law and a theoretical model exhibited an uncertainty of ∼3% that has been attributed to the ∼2% lattice misfit in the MgO∕ZnO materials system. Localized exciton peaks of MgₓZn₁ˍₓO alloy in photoluminescence(PL) measurements disappeared completely, while the neutral donor-acceptor pair and 1-longitudinal optical-phonon energies decreased rapidly with the increase of Mg composit...
Exciton localization in ZnO/MgxZn1−xOquantum wells(QWs) has been investigated systematically with va...
[[abstract]]X-rayabsorption near-edge structure (XANES) and x-ray emission spectroscopy (XES) measur...
Alloying has the potential to create new types of semiconductors with novel optical properties that ...
The growth techniques for Mg_xZn_(1−x)O thin films have advanced at a rapid pace in recent years, en...
We used depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy to mea...
Deep level defects in n-type unintentionally doped a-plane MgxZn1−xO, grown by molecular beam epitax...
Pure and doped Zn1−xMgxO films were deposited onto glass substrate by ultrasonic spray pyrolysis tec...
A first principles calculation is used to simulate the variation of the lattice constant, structure,...
Zn1−xCdxO(11math0) films have been grown on (01math2) sapphire (r–plane) substrates by metal-organic...
The financial support of M-ERA.NET project “ZnMgO materials with tunable band gap for solar-blind UV...
Zn 1-xMg xO thin films on (001) sapphire substrates were deposited using pulsed laser deposition. As...
High-quality Zn1-xMgxO(0.00 less than or equal tox less than or equal to0.49) thin films were epitax...
The characteristics of the excitonic absorption and emission around the fundamental bandgap of wurtz...
By using the spray pyrolysis methodology in its classical configuration we have grown self-assembled...
The financial support of M-ERA.NET project “ZnMgO materials with tunable band gap for solar-blind UV...
Exciton localization in ZnO/MgxZn1−xOquantum wells(QWs) has been investigated systematically with va...
[[abstract]]X-rayabsorption near-edge structure (XANES) and x-ray emission spectroscopy (XES) measur...
Alloying has the potential to create new types of semiconductors with novel optical properties that ...
The growth techniques for Mg_xZn_(1−x)O thin films have advanced at a rapid pace in recent years, en...
We used depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy to mea...
Deep level defects in n-type unintentionally doped a-plane MgxZn1−xO, grown by molecular beam epitax...
Pure and doped Zn1−xMgxO films were deposited onto glass substrate by ultrasonic spray pyrolysis tec...
A first principles calculation is used to simulate the variation of the lattice constant, structure,...
Zn1−xCdxO(11math0) films have been grown on (01math2) sapphire (r–plane) substrates by metal-organic...
The financial support of M-ERA.NET project “ZnMgO materials with tunable band gap for solar-blind UV...
Zn 1-xMg xO thin films on (001) sapphire substrates were deposited using pulsed laser deposition. As...
High-quality Zn1-xMgxO(0.00 less than or equal tox less than or equal to0.49) thin films were epitax...
The characteristics of the excitonic absorption and emission around the fundamental bandgap of wurtz...
By using the spray pyrolysis methodology in its classical configuration we have grown self-assembled...
The financial support of M-ERA.NET project “ZnMgO materials with tunable band gap for solar-blind UV...
Exciton localization in ZnO/MgxZn1−xOquantum wells(QWs) has been investigated systematically with va...
[[abstract]]X-rayabsorption near-edge structure (XANES) and x-ray emission spectroscopy (XES) measur...
Alloying has the potential to create new types of semiconductors with novel optical properties that ...