Quantum transport properties of two-dimensional electron gas(2DEG) in undoped MgₓZn₁ˍₓO/ZnO heterostructures grown by metal organic vapor phase epitaxy have been investigated. A large zero-field spin-splitting energy more than 15 meV in the 2DEG is determined at 1.6 K. Meanwhile, ferromagnetism is observed in the heterostructures. The findings reveal that the 2DEG is spin polarized at zero magnetic fields. It is believed that the exchange interaction between the itinerant electrons in the two-dimensional channel and the magnetic polarons in the MgₓZn₁ˍₓO barrier around the interface results in the spin polarization of the 2DEG.This work was supported by National Basic Research Program of China (Nos. 2012CB921304 and 2012CB619306), the Nat...
We report the fabrication of both antidot lattices and unidirectional stripe patterns upon molecular...
This review visits recent experimental efforts on high mobility two-dimensional electron systems (2D...
10.1109/COMMAD.2012.6472430Conference on Optoelectronic and Microelectronic Materials and Devices, P...
Quantum transport properties of two-dimensional electron gas (2DEG) in undoped MgxZn1-x O/ZnO hetero...
We report the formation of two-dimensional electron gas 2DEG at the Zn1−xMgxO/ZnO interface grown b...
The discovery of a high-mobility two-dimensional electron gas (2DEG) in wurtzite ZnO/Zn(Mg)O heteros...
Radiative recombination of two-dimensional electron gas(2DEG), induced by polarization and validated...
We investigate the spin susceptibility (g^∗m^∗) of dilute two-dimensional (2D) electrons confined at...
A spin-related photocurrent with swirly distribution and anomalous dependence of the total spin-rela...
Magneto-transport studies on ZnMgO/ZnO heterostructures grown by MOVPE technique have been performed...
We report magnetotransport properties of a two-dimensional electron gas confined at MgZnO/ZnO hetero...
We report the experimental determination of Rashba spin-orbit interaction (SOI) strength in two-dime...
We report magnetotransport measurements on a high-mobility two-dimensional electron system at the no...
Spintronics and High Electronic Mobility Transistors (HEMTs) are active frontiers in the development...
We report electrical transport measurements in a tilted magnetic field on a high-mobility two-dimens...
We report the fabrication of both antidot lattices and unidirectional stripe patterns upon molecular...
This review visits recent experimental efforts on high mobility two-dimensional electron systems (2D...
10.1109/COMMAD.2012.6472430Conference on Optoelectronic and Microelectronic Materials and Devices, P...
Quantum transport properties of two-dimensional electron gas (2DEG) in undoped MgxZn1-x O/ZnO hetero...
We report the formation of two-dimensional electron gas 2DEG at the Zn1−xMgxO/ZnO interface grown b...
The discovery of a high-mobility two-dimensional electron gas (2DEG) in wurtzite ZnO/Zn(Mg)O heteros...
Radiative recombination of two-dimensional electron gas(2DEG), induced by polarization and validated...
We investigate the spin susceptibility (g^∗m^∗) of dilute two-dimensional (2D) electrons confined at...
A spin-related photocurrent with swirly distribution and anomalous dependence of the total spin-rela...
Magneto-transport studies on ZnMgO/ZnO heterostructures grown by MOVPE technique have been performed...
We report magnetotransport properties of a two-dimensional electron gas confined at MgZnO/ZnO hetero...
We report the experimental determination of Rashba spin-orbit interaction (SOI) strength in two-dime...
We report magnetotransport measurements on a high-mobility two-dimensional electron system at the no...
Spintronics and High Electronic Mobility Transistors (HEMTs) are active frontiers in the development...
We report electrical transport measurements in a tilted magnetic field on a high-mobility two-dimens...
We report the fabrication of both antidot lattices and unidirectional stripe patterns upon molecular...
This review visits recent experimental efforts on high mobility two-dimensional electron systems (2D...
10.1109/COMMAD.2012.6472430Conference on Optoelectronic and Microelectronic Materials and Devices, P...