Formation and shape control of InAsSb/InP (001) nanostructures

This paper presents a study on the formation and shape control of InAsSb/InP nanostructures on InP (001) substrates. For the formation of InAsSbnanostructures, incorporation of Sb atoms into InAs islands results in significant morphology change in the islands due to the surfactant effect of Sb atoms and the large strain in the system. And, shape control of InAsSb/InP nanostructures is achieved by optimizing their growth parameters. Low growth temperature and high growth rate will induce the formation of InAsSb elongated quantum dots, while high growth temperature and low growth rate will promote the formation of InAsSbquantum wires or dashes.Financial support from the Australian Research Council is gratefully acknowledged