Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation

An experimental concept of studying shifts between concentration-versus-depth profiles of vacancy and interstitial-type defects in ion-implanted silicon is demonstrated. This concept is based on deep level transient spectroscopy measurements where the filling pulse width is varied. The vacancy profile, represented by the vacancy-oxygen center, and the interstitial profile, represented by the substitutional carbon–interstitial carbon pair, are obtained at the same sample temperature and can be recorded with a high relative depth resolution. For 6 MeV ₁₁B ions, the peak of the interstitial profile is displaced by ∼0.5 μm towards larger depths compared to that of the vacancy profile, which is primarily attributed to the preferential forward momentum of recoiling Si atoms.Financial support was kindly provided by the Swedish Research Council for Engineering Sciences (TFR), the Swedish Foundation for International Cooperation in Research and Higher Education (STINT), and the EU Commission, Contract No. ERBFMRXCT980208 (ENDEASD—TMR network)