The absorption and extinctionspectra of Genanocrystals in silica formed by ion implantation are studied using photothermal deflection and transmission spectroscopies. It is found that scattering makes a significant contribution to the extinction spectrum, damping the spectral features and resulting in a Rayleigh scattering-likeω⁴ dependence. In contrast, the spectra measured by photothermal deflection clearly show features such as the E1/E1+Δ1 transitions. The Tauc gap is extracted to be ∼0.7±0.1 eV
Embedded germanium nanocrystals (NCs) in a silica host matrix are theoretically analyzed to identify...
The formation and structure of Ge nanocrystals produced in silica by ion-implantation and thermal an...
A combination of conventional and synchrotron-based techniques has been used to characterize the siz...
Cataloged from PDF version of article.We use a dedicated Z-scan setup, arranged to account for cumul...
Ge nanocrystals formed in silica by implantation with 1.0 MeV Ge ions and subsequent annealing at 11...
The usage of semiconductor nanostructures is highly promising for boosting the energy conversion eff...
Abstract The usage of semiconductor nanostructures is highly promising for boosting the energy conve...
Time-resolved degenerate-four-wave-mixing measurements were used to study the nonlinear optical resp...
Optical absorption spectra from silicon-implanted silica slides are shown to contain features due to...
Three different size distributions of Ge quantum dots (>~200, 110, and 60 Å) have been synthesized v...
We use a dedicated Z -scan setup, arranged to account for cumulative effects, to study the nonlinear...
We have studied the origin of visible photoluminescence of Ge nanocrystals in SiOZ glassymatrix. Spe...
Ge nanocrystals (NCs) grown by ion implantation in amorphous silica matrices were irradiated with 5 ...
International audienceWe present the optical spectra of Ge1−xSix alloy nanocrystals of a fixed size ...
The optical absorption characteristics of noncrystalline and crystalline Ge nanoparticles with diame...
Embedded germanium nanocrystals (NCs) in a silica host matrix are theoretically analyzed to identify...
The formation and structure of Ge nanocrystals produced in silica by ion-implantation and thermal an...
A combination of conventional and synchrotron-based techniques has been used to characterize the siz...
Cataloged from PDF version of article.We use a dedicated Z-scan setup, arranged to account for cumul...
Ge nanocrystals formed in silica by implantation with 1.0 MeV Ge ions and subsequent annealing at 11...
The usage of semiconductor nanostructures is highly promising for boosting the energy conversion eff...
Abstract The usage of semiconductor nanostructures is highly promising for boosting the energy conve...
Time-resolved degenerate-four-wave-mixing measurements were used to study the nonlinear optical resp...
Optical absorption spectra from silicon-implanted silica slides are shown to contain features due to...
Three different size distributions of Ge quantum dots (>~200, 110, and 60 Å) have been synthesized v...
We use a dedicated Z -scan setup, arranged to account for cumulative effects, to study the nonlinear...
We have studied the origin of visible photoluminescence of Ge nanocrystals in SiOZ glassymatrix. Spe...
Ge nanocrystals (NCs) grown by ion implantation in amorphous silica matrices were irradiated with 5 ...
International audienceWe present the optical spectra of Ge1−xSix alloy nanocrystals of a fixed size ...
The optical absorption characteristics of noncrystalline and crystalline Ge nanoparticles with diame...
Embedded germanium nanocrystals (NCs) in a silica host matrix are theoretically analyzed to identify...
The formation and structure of Ge nanocrystals produced in silica by ion-implantation and thermal an...
A combination of conventional and synchrotron-based techniques has been used to characterize the siz...