Fluorine-doping concentration and fictive temperature dependence of self-trapped holes in SiO[sub 2] glasses

Fictive temperature (Tf) and fluorine (F)-doping concentration dependences of self-trapped holes (STHs) in silicaglasses created by UVirradiation at low temperatures have been studied by the electron-paramagnetic-resonance method. It was found that the yield of STH decreases with decreasing Tf and increasing F-doping concentration. In combination with infrared spectra measurements, the correlation among Tf, F-doping concentration, Si–O bond length, and Si–O–Si bond angle was elucidated. We conclude that the change in both Tf and F doping can modify the network of SiO₂glass, leading to the suppression of the formation of STHs