Doping Incorporation in InAs nanowires characterized by capacitance measurements

Sn and Se dopedInAsnanowires are characterized using a capacitance-voltage technique where the threshold voltages of nanowirecapacitors with different diameter are determined and analyzed using an improved radial metal-insulator-semiconductor field-effect transistor model. This allows for a separation of doping in the core of the nanowire from the surface charge at the side facets of the nanowire. The data show that the doping level in the InAsnanowire can be controlled on the level between 2×10¹⁸ to 1×10¹⁹ cm¯³, while the surface charge density exceeds 5×10¹² cm¯² and is shown to increase with higher dopant precursor molar fraction.This work was supported by the Swedish Research Council, the Swedish Foundation for Strategic Research, VINNOVA, the EU-project NODE 015783 and the Knut and Alice Wallenberg Foundation