Phase stepping interferometry is used to measure the size of near-cylindrical nanowires. Nanowires with nominal radii of 25 nm and 50 nm were used to test this by comparing specific measured optical phase profile values with theoretical values calculated using a wave-optic model of the Phase stepping interferometry (PSI) system. Agreement within 10% was found, which enabled nanowire radii to be predicted within 4% of the nominal value. This demonstration highlights the potential capability for phase stepping interferometry to characterize single nanoparticles of known geometry in the optical far-field.This research was supported by Australian Research Council Grant Nos. LE110100024 and DP130102674, a Macquarie University Research Developm...
Two topics are considered: (i) the analysis of time-resolved in situ X-ray diffraction studies of fr...
This thesis concerns the theoretical and experimental study of three applications of III-V semicondu...
We report on the optical trapping characteristics of InP nanowires with dimensions of 30 (±6) nm in ...
Phase stepping interferometry is used to measure the size of near-cylindrical nanowires. Nanowires w...
A method for sizing nanoparticles using phase-stepping interferometry has been developed recently by...
Optical surface profilers are state-of-the-art instruments for measuring surface height profiles. Th...
A substrate-free approach of semiconductor nanowire growth has been achieved by the aerotaxy techniq...
The fabrication of optical fibre nanowires has recently attracted much attention [1-5]. Nanowires lo...
Electrical and optical properties of semiconducting nanowires (NWs) strongly depend on their diamete...
In this chapter, three types of phenomena (electrical, mechanical, and electromechanical) that can b...
The emission from nanowires can couple to waveguide modes supported by the nanowire geometry, thus g...
Vertical semiconductor nanowires have gained considerable attention in the last decade for their att...
The luminescence and inner structure of GaAs-AlGaAs quantum well tube (QWT) nanowires were studied u...
Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, U...
The purpose of this thesis is to preform ellipsometric measurements to investigate the possibility o...
Two topics are considered: (i) the analysis of time-resolved in situ X-ray diffraction studies of fr...
This thesis concerns the theoretical and experimental study of three applications of III-V semicondu...
We report on the optical trapping characteristics of InP nanowires with dimensions of 30 (±6) nm in ...
Phase stepping interferometry is used to measure the size of near-cylindrical nanowires. Nanowires w...
A method for sizing nanoparticles using phase-stepping interferometry has been developed recently by...
Optical surface profilers are state-of-the-art instruments for measuring surface height profiles. Th...
A substrate-free approach of semiconductor nanowire growth has been achieved by the aerotaxy techniq...
The fabrication of optical fibre nanowires has recently attracted much attention [1-5]. Nanowires lo...
Electrical and optical properties of semiconducting nanowires (NWs) strongly depend on their diamete...
In this chapter, three types of phenomena (electrical, mechanical, and electromechanical) that can b...
The emission from nanowires can couple to waveguide modes supported by the nanowire geometry, thus g...
Vertical semiconductor nanowires have gained considerable attention in the last decade for their att...
The luminescence and inner structure of GaAs-AlGaAs quantum well tube (QWT) nanowires were studied u...
Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, U...
The purpose of this thesis is to preform ellipsometric measurements to investigate the possibility o...
Two topics are considered: (i) the analysis of time-resolved in situ X-ray diffraction studies of fr...
This thesis concerns the theoretical and experimental study of three applications of III-V semicondu...
We report on the optical trapping characteristics of InP nanowires with dimensions of 30 (±6) nm in ...