We have investigated in-situ Si doping of InAs nanowires grown by molecular beam epitaxy from gold seeds. The effectiveness of n-type doping is confirmed by electrical measurements showing an increase of the electron density with the Si flux. We also observe an increase of the electron density along the nanowires from the tip to the base, attributed to the dopant incorporation on the nanowire facets whereas no detectable incorporation occurs through the seed. Furthermore the Si incorporation strongly influences the lateral growth of the nanowires without giving rise to significant tapering, revealing the complex interplay between axial and lateral growth.This work was supported by the ANR through the Project No. ANR-11-JS04-002-01,...
We investigated the transport properties of lateral gate field effect transistors (FET) that have be...
High electron mobility III-V compound semiconductors such as indium arsenide (InAs) are promising ca...
International audienceHeteroepitaxial growth of Ge nanowires was carried out on Si(111) substrates b...
We report on the growth of Te-doped catalyst-free InAs nanowires by molecular beam epitaxy on silico...
In this study, the structural quality of Au-catalyzed InAs nanowires grown by molecular beam epitaxy...
AbstractIn this work, the nucleation and growth of InAs nanowires on patterned SiO2/Si(111) substrat...
We report on the growth, structural characterization, and conductivity studies of Si-doped InP nanow...
The influence of growth parameters on the morphology and density of InAs nanowires (NWs) grown on ba...
This Ph.D study focuses on how to grow high yield and good quality InAs nanowires in a controllable ...
This Ph.D study focuses on how to grow high yield and good quality InAs nanowires in a controllable ...
This thesis deals with the epitaxial growth and characterization of silicon nanowires, because these...
We report the self-catalysed growth of InAs nanowires (NWs) on graphite thin films using molecular b...
Au nanoparticles are commonly used as seeds for epitaxial growth of III-V semiconductor nanowires. H...
High aspect ratios are highly desired to fully exploit the one-dimensional properties of indium anti...
Semiconductor nanowires are interesting building blocks for a variety of electronic and optoelectron...
We investigated the transport properties of lateral gate field effect transistors (FET) that have be...
High electron mobility III-V compound semiconductors such as indium arsenide (InAs) are promising ca...
International audienceHeteroepitaxial growth of Ge nanowires was carried out on Si(111) substrates b...
We report on the growth of Te-doped catalyst-free InAs nanowires by molecular beam epitaxy on silico...
In this study, the structural quality of Au-catalyzed InAs nanowires grown by molecular beam epitaxy...
AbstractIn this work, the nucleation and growth of InAs nanowires on patterned SiO2/Si(111) substrat...
We report on the growth, structural characterization, and conductivity studies of Si-doped InP nanow...
The influence of growth parameters on the morphology and density of InAs nanowires (NWs) grown on ba...
This Ph.D study focuses on how to grow high yield and good quality InAs nanowires in a controllable ...
This Ph.D study focuses on how to grow high yield and good quality InAs nanowires in a controllable ...
This thesis deals with the epitaxial growth and characterization of silicon nanowires, because these...
We report the self-catalysed growth of InAs nanowires (NWs) on graphite thin films using molecular b...
Au nanoparticles are commonly used as seeds for epitaxial growth of III-V semiconductor nanowires. H...
High aspect ratios are highly desired to fully exploit the one-dimensional properties of indium anti...
Semiconductor nanowires are interesting building blocks for a variety of electronic and optoelectron...
We investigated the transport properties of lateral gate field effect transistors (FET) that have be...
High electron mobility III-V compound semiconductors such as indium arsenide (InAs) are promising ca...
International audienceHeteroepitaxial growth of Ge nanowires was carried out on Si(111) substrates b...